GaAs/GaInP quantum well intersubband photodetectors for focal plane array infrared imaging

C. Jelen*, Steven Boyd Slivken, G. J. Brown, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

We demonstrate long wavelength quantum well infrared photodetectors (QWIP) with GaAs quantum wells and GaInP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. The optimum well width was 75 angstroms, which resulted in a detection peak at 13 μm and a cutoff wavelength of 15 μm. Dark current measurements of the samples with 15 μm cutoff wavelength show low dark current densities. Preliminary focal plane array imaging is demonstrated.

Original languageEnglish (US)
Pages (from-to)195-199
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume450
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 4 1996Dec 5 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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