Abstract
We demonstrate long wavelength quantum well infrared photodetectors (QWIP) with GaAs quantum wells and GaInP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. The optimum well width was 75 angstroms, which resulted in a detection peak at 13 μm and a cutoff wavelength of 15 μm. Dark current measurements of the samples with 15 μm cutoff wavelength show low dark current densities. Preliminary focal plane array imaging is demonstrated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 195-199 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 450 |
| State | Published - Jan 1 1997 |
| Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 4 1996 → Dec 5 1996 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering