Gain and recombination dynamics in photodetectors made with quantum nanostructures: The quantum dot in a well and the quantum well

B. Movaghar*, S. Tsao, S. Abdollahi Pour, T. Yamanaka, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We consider the problem of charge transport and recombination in semiconductor quantum well infrared photodetectors and quantum-dot-in-a-well infrared detectors. The photoexcited carrier relaxation is calculated using rigorous random-walk and diffusion methods, which take into account the finiteness of recombination cross sections, and if necessary the memory of the carrier generation point. In the present application, bias fields are high and it is sufficient to consider the drift limited regime. The photoconductive gain is discussed in a quantum-mechanical language, making it more transparent, especially with regard to understanding the bias and temperature dependence. Comparing experiment and theory, we can estimate the respective recombination times. The method developed here applies equally well to nanopillar structures, provided account is taken of changes in mobility and trapping. Finally, we also derive formulas for the photocurrent time decays, which in a clean system at high bias are sums of two exponentials.

Original languageEnglish (US)
Article number115320
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number11
DOIs
StatePublished - Sep 23 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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