Gain-length scaling in quantum dot/quantum well infrared photodetectors

T. Yamanaka; B. Movaghar; S. Tsao; S. Kuboya; A. Myzaferi; M. Razeghi

doi:10.1063/1.3222856

Gain-length scaling in quantum dot/quantum well infrared photodetectors

T. Yamanaka^*, B. Movaghar, S. Tsao, S. Kuboya, A. Myzaferi, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The gain in quantum dot/quantum well infrared photodetectors is investigated. The scaling of the gain with device length has been analyzed, and the behavior agrees with the previously proposed model. We conclude that we understand the gain in the low bias region, but in the high field region, discrepancies remain. An extension of the gain model is presented to cover the very high electric field region. The high field data are compared to the extended model and discussed.

Original language	English (US)
Article number	093502
Journal	Applied Physics Letters
Volume	95
Issue number	9
DOIs	https://doi.org/10.1063/1.3222856
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3222856

Cite this

@article{1a270d634a1a4fa09a9f35be4a299bf4,

title = "Gain-length scaling in quantum dot/quantum well infrared photodetectors",

abstract = "The gain in quantum dot/quantum well infrared photodetectors is investigated. The scaling of the gain with device length has been analyzed, and the behavior agrees with the previously proposed model. We conclude that we understand the gain in the low bias region, but in the high field region, discrepancies remain. An extension of the gain model is presented to cover the very high electric field region. The high field data are compared to the extended model and discussed.",

author = "T. Yamanaka and B. Movaghar and S. Tsao and S. Kuboya and A. Myzaferi and M. Razeghi",

year = "2009",

doi = "10.1063/1.3222856",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Gain-length scaling in quantum dot/quantum well infrared photodetectors

AU - Yamanaka, T.

AU - Movaghar, B.

AU - Tsao, S.

AU - Kuboya, S.

AU - Myzaferi, A.

AU - Razeghi, M.

PY - 2009

Y1 - 2009

N2 - The gain in quantum dot/quantum well infrared photodetectors is investigated. The scaling of the gain with device length has been analyzed, and the behavior agrees with the previously proposed model. We conclude that we understand the gain in the low bias region, but in the high field region, discrepancies remain. An extension of the gain model is presented to cover the very high electric field region. The high field data are compared to the extended model and discussed.

AB - The gain in quantum dot/quantum well infrared photodetectors is investigated. The scaling of the gain with device length has been analyzed, and the behavior agrees with the previously proposed model. We conclude that we understand the gain in the low bias region, but in the high field region, discrepancies remain. An extension of the gain model is presented to cover the very high electric field region. The high field data are compared to the extended model and discussed.

UR - http://www.scopus.com/inward/record.url?scp=69949136041&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69949136041&partnerID=8YFLogxK

U2 - 10.1063/1.3222856

DO - 10.1063/1.3222856

M3 - Article

AN - SCOPUS:69949136041

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093502

ER -

Gain-length scaling in quantum dot/quantum well infrared photodetectors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this