Abstract
GaInAs/InP quantum well infrared photodetectors (QWIP) were grown on Si substrate by metalorganic chemical vapor deposition. The growth condition of InP buffer layer on Si was optimized and its crystal quality was evaluated by high-resolution X-ray diffraction and atomic force microscopy experiments. Two different in-situ thermal cyclic annealing techniques were used to reduce the threading dislocation density in the InP-on-Si. The new thermal annealing with larger temperature range was found to improve the quality of InP-on-Si dramatically. QWIP-on-Si samples with these two different thermal annealing were prepared. Important detector properties, like dark current, spectral response, peak responsivity, and specific detectivity were studied and compared with a QWIP-on-InP sample with identical structure. Small blueshift was observed in both QWIP-on-Si detector's spectral responses. Record high detectivity of 2.3×109 cmHz1/2/W was obtained for one QWIP-on-Si detector at 77K.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 78-84 |
| Number of pages | 7 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4454 |
| DOIs | |
| State | Published - 2001 |
| Event | Materials for Infrared Detectors - San Diego, CA, United States Duration: Jul 30 2001 → Aug 1 2001 |
Keywords
- Detectivity
- GaInAs
- InP
- Quantum well infrared photodetector
- Si substrate
- Thermal cyclic anneal
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering