GaInAsP/InP 1.35 μm double heterostructure laser grown on silicon substrate by metalorganic chemical vapor deposition

K. Mobarhan*, C. Jelen, E. Kolev, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A 1.35 μm GaInAsP/InP double heterostructure laser has been grown on a Si substrate using low-pressure metalorganic chemical vapor deposition. This was done without the use of a superlattice layer or a very thick InP buffer layer, which are used to prevent the dislocations from spreading into the active layer. Pulsed operation with output power of over 200 mW per facet was achieved at room temperature for broad area lasers with 20 μm width and 170 μm cavity length. The threshold current density of a 350 μm cavity length device was 9.8 kA/cm2. The characteristic temperature was 66 K.

Original languageEnglish (US)
Pages (from-to)743-745
Number of pages3
JournalJournal of Applied Physics
Volume74
Issue number1
DOIs
StatePublished - Dec 1 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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