GaInN/GaN multi-quantum well laser diodes grown by low-pressure metalorganic chemical vapor deposition

P. Kung, A. Saxler, D. Walker, A. Rybaltowski, Xiaolong Zhang, J. Diaz, M. Razeghi

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume3
DOIs
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Materials Science(all)

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