Gallium nitride on silicon for consumer and scalable photonics

C. Bayram*, K. T. Shiu, Y. Zhu, C. W. Cheng, D. K. Sadana, Z. Vashaei, E. Cicek, R. McClintock, M. Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Gallium Nitride (GaN) is a unique material system that has been heavily exploited for photonic devices thanks to ultraviolet-to-terahertz spectral tunability. However, without a cost effective approach, GaN technology is limited to laboratory demonstrations and niche applications. In this investigation, integration of GaN on Silicon (100) substrates is attempted to enable widespread application of GaN based optoelectronics. Controlled local epitaxy of wurtzite phase GaN on on-axis Si(100) substrates is demonstrated via metal organic chemical vapor deposition (MOCVD). CMOScompatible fabrication scheme is used to realize [SiO 2 -Si{111}-Si{100}] groove structures on conventional 200-mm Si(100) substrates. MOCVD growth (surface treatment, nucleation, initiation) conditions are studied to achieve controlled GaN epitaxy on such grooved Si(100) substrates. Scanning electron microscopy and transmission electron microscopy techniques are used to determine uniformity and defectivity of the GaN. Our results show that aforementioned groove structures along with optimized MOCVD growth conditions can be used to achieve controlled local epitaxy of wurtzite phase GaN on on-axis Si(100) substrates.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices X
DOIs
StatePublished - Apr 9 2013
EventQuantum Sensing and Nanophotonic Devices X - San Francisco, CA, United States
Duration: Feb 3 2013Feb 7 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8631
ISSN (Print)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices X
CountryUnited States
CitySan Francisco, CA
Period2/3/132/7/13

Keywords

  • Gallium Nitride
  • Silicon
  • controlled local epitaxy
  • metal organic chemical vapor deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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