GalnAs/InP nanopillar arrays for long wavelength infrared detection

Aaron Gin*, Yajun Wei, Andrew Hood, Darin Huffman, Manijeh Razeghi, Gail J. Brown

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Nanopillar devices have been fabricated from GalnAs/InP QWIP material grown by MOCVD. Using electron beam lithography and reactive ion etching techniques, large, regular arrays of nanopillars with controllable diameters ranging from 150 nm to less than 40 nm have been reproducibly formed. Photoluminescence experiments demonstrate a strong peak wavelength blue shift for nanopillar structures compared to the as-grown quantum well material. Top and bottom metal contacts have been realized using a polyimide planarization and etchback procedure. I-V and noise measurements have been performed. Optical measurements indicate photoconductive response in selected nanopillar arrays. Device peak wavelength response occurs at about 8 urn with peak device responsivity of 420 mA/W. Peak detectivity of 3×108 cmHz 1/2 /W has been achieved at -1V bias and 30 K.

Original languageEnglish (US)
Article number52
Pages (from-to)350-357
Number of pages8
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5732
DOIs
StatePublished - Jul 21 2005
EventQuantum Sensing and Nanophotonic Devices II - San Jose, CA, United States
Duration: Jan 23 2005Jan 27 2005

Keywords

  • Electron beam lithography
  • GalnAs
  • InP
  • Infrared
  • Nanopillar
  • Optoelectronic device
  • Quantum dot
  • Quantum well infrared photodetector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Biomaterials
  • Radiology Nuclear Medicine and imaging

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