GaN based optoelectronic devices: From ultraviolet detectors and visible emitters towards thz intersubband devices

R. McClintock, M. Razeghi

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

III-Nitride material system (AlGaInN) possesses unique optical, electrical and structural properties such as a wide tunable direct bandgap, large longitudinal optical phonon energy, inherit fast carrier dynamics; good carrier transport properties, high breakdown fields; and high robustness and chemical stability. Thanks to these inherit advantages, they are investigated for everyday to military and scientific applications such as illumination sources; bio-agent detection, concealed weapons/drugs detection; and space exploration. With continuous developments in material growth/characterization and device processing/measurement technologies, gap engineered III-Nitride materials extend their unique solutions from ultraviolet and visible regime towards THz spectra.

Original languageEnglish (US)
Pages (from-to)19-26
Number of pages8
JournalECS Transactions
Volume64
Issue number7
DOIs
StatePublished - 2014
EventSymposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 4 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: Oct 5 2014Oct 9 2014

ASJC Scopus subject areas

  • Engineering(all)

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