Abstract
III-Nitride material system (AlGaInN) possesses unique optical, electrical and structural properties such as a wide tunable direct bandgap, large longitudinal optical phonon energy, inherit fast carrier dynamics; good carrier transport properties, high breakdown fields; and high robustness and chemical stability. Thanks to these inherit advantages, they are investigated for everyday to military and scientific applications such as illumination sources; bio-agent detection, concealed weapons/drugs detection; and space exploration. With continuous developments in material growth/characterization and device processing/measurement technologies, gap engineered III-Nitride materials extend their unique solutions from ultraviolet and visible regime towards THz spectra.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 19-26 |
| Number of pages | 8 |
| Journal | ECS Transactions |
| Volume | 64 |
| Issue number | 7 |
| DOIs | |
| State | Published - 2014 |
| Event | Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 4 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: Oct 5 2014 → Oct 9 2014 |
Funding
ASJC Scopus subject areas
- General Engineering