III-Nitride material system (AlGaInN) possesses unique optical, electrical and structural properties such as a wide tunable direct bandgap, large longitudinal optical phonon energy, inherit fast carrier dynamics; good carrier transport properties, high breakdown fields; and high robustness and chemical stability. Thanks to these inherit advantages, they are investigated for everyday to military and scientific applications such as illumination sources; bio-agent detection, concealed weapons/drugs detection; and space exploration. With continuous developments in material growth/characterization and device processing/measurement technologies, gap engineered III-Nitride materials extend their unique solutions from ultraviolet and visible regime towards THz spectra.
|Original language||English (US)|
|Number of pages||8|
|State||Published - 2014|
|Event||Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 4 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico|
Duration: Oct 5 2014 → Oct 9 2014
ASJC Scopus subject areas