GaN based optoelectronic devices: From ultraviolet detectors and visible emitters towards thz intersubband devices

Keyphrases

• UV-VIS Spectroscopy 100%
• Ultraviolet Detector 100%
• GaN-based 100%
• III-nitride Materials 100%
• Intersubband Devices 100%
• Material System 50%
• Scientific Applications 50%
• Military Applications 50%
• Chemical Stability 50%
• Optoelectronic Properties 50%
• Structural Properties 50%
• Material Growth 50%
• Growth Characterization 50%
• Illumination Source 50%
• Measurement Technology 50%
• Drug Detection 50%
• THz Spectrum 50%
• Space Exploration 50%
• Direct Band Gap 50%
• Robust Stability 50%
• Device Processing 50%
• Carrier Dynamics 50%
• Longitudinal Optical Phonons 50%
• Continuous Development 50%
• Unique Solution 50%
• Agent Detection 50%
• Aluminum Gallium Nitride (AlGaN) 50%
• Carrier Transport Properties 50%
• High Breakdown Field 50%
• High Robustness 50%
• Phonon Energy 50%
• Visible Regime 50%
• Bioagents 50%
• Technology Gap 50%
• Concealed Weapons 50%

Engineering

• III Nitride Materials 100%
• Based Optoelectronic Device 100%
• Material System 50%
• Breakdown Field 50%
• Energy Engineering 50%
• Structural Property 50%
• Optical Phonon 50%
• Band Gap 50%

Material Science

• III Nitride Materials 100%
• Carrier Transport 50%
• Structural Property 50%
• Growth (Materials) 50%