GaN doped with sulfur

A. Saxler; P. Kung; X. Zhang; D. Walker; J. Solomon; M. Ahoujja; W. C. Mitchel; H. R. Vydyanath; M. Razeghi

doi:10.4028/www.scientific.net/msf.258-263.1161

GaN doped with sulfur

A. Saxler^*, P. Kung, X. Zhang, D. Walker, J. Solomon, M. Ahoujja, W. C. Mitchel, H. R. Vydyanath, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

GaN thin films were doped during metalorganic chemical vapor deposition with sulfur using dilute hydrogen sulfide in hydrogen. The effects of dopant flow and growth temperature were studied. The films were characterized by temperature electrical measurements, Auger electron spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and scanning electron microscopy. The low resultant carrier concentrations indicate that sulfur has a limited solubility in GaN.

Original language	English (US)
Pages (from-to)	1161-1166
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	PART 2
DOIs	https://doi.org/10.4028/www.scientific.net/msf.258-263.1161
State	Published - 1997

Keywords

Doping
GaN
Sulfur

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "GaN doped with sulfur",

abstract = "GaN thin films were doped during metalorganic chemical vapor deposition with sulfur using dilute hydrogen sulfide in hydrogen. The effects of dopant flow and growth temperature were studied. The films were characterized by temperature electrical measurements, Auger electron spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and scanning electron microscopy. The low resultant carrier concentrations indicate that sulfur has a limited solubility in GaN.",

keywords = "Doping, GaN, Sulfur",

author = "A. Saxler and P. Kung and X. Zhang and D. Walker and J. Solomon and M. Ahoujja and Mitchel, {W. C.} and Vydyanath, {H. R.} and M. Razeghi",

year = "1997",

doi = "10.4028/www.scientific.net/msf.258-263.1161",

language = "English (US)",

volume = "258-263",

pages = "1161--1166",

journal = "Materials Science Forum",

issn = "0255-5476",

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TY - JOUR

T1 - GaN doped with sulfur

AU - Saxler, A.

AU - Kung, P.

AU - Zhang, X.

AU - Walker, D.

AU - Solomon, J.

AU - Ahoujja, M.

AU - Mitchel, W. C.

AU - Vydyanath, H. R.

AU - Razeghi, M.

PY - 1997

Y1 - 1997

N2 - GaN thin films were doped during metalorganic chemical vapor deposition with sulfur using dilute hydrogen sulfide in hydrogen. The effects of dopant flow and growth temperature were studied. The films were characterized by temperature electrical measurements, Auger electron spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and scanning electron microscopy. The low resultant carrier concentrations indicate that sulfur has a limited solubility in GaN.

AB - GaN thin films were doped during metalorganic chemical vapor deposition with sulfur using dilute hydrogen sulfide in hydrogen. The effects of dopant flow and growth temperature were studied. The films were characterized by temperature electrical measurements, Auger electron spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and scanning electron microscopy. The low resultant carrier concentrations indicate that sulfur has a limited solubility in GaN.

KW - Doping

KW - GaN

KW - Sulfur

UR - http://www.scopus.com/inward/record.url?scp=3743068258&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3743068258&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/msf.258-263.1161

DO - 10.4028/www.scientific.net/msf.258-263.1161

M3 - Article

AN - SCOPUS:3743068258

VL - 258-263

SP - 1161

EP - 1166

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - PART 2

ER -

GaN doped with sulfur

Abstract

Keywords

ASJC Scopus subject areas

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