Abstract
GaN thin films were doped during metalorganic chemical vapor deposition with sulfur using dilute hydrogen sulfide in hydrogen. The effects of dopant flow and growth temperature were studied. The films were characterized by temperature electrical measurements, Auger electron spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and scanning electron microscopy. The low resultant carrier concentrations indicate that sulfur has a limited solubility in GaN.
Original language | English (US) |
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Pages (from-to) | 1161-1166 |
Number of pages | 6 |
Journal | Materials Science Forum |
Volume | 258-263 |
Issue number | PART 2 |
DOIs | |
State | Published - 1997 |
Keywords
- Doping
- GaN
- Sulfur
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering