GaN doped with sulfur

A. Saxler*, P. Kung, X. Zhang, D. Walker, J. Solomon, M. Ahoujja, W. C. Mitchel, H. R. Vydyanath, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

GaN thin films were doped during metalorganic chemical vapor deposition with sulfur using dilute hydrogen sulfide in hydrogen. The effects of dopant flow and growth temperature were studied. The films were characterized by temperature electrical measurements, Auger electron spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and scanning electron microscopy. The low resultant carrier concentrations indicate that sulfur has a limited solubility in GaN.

Original languageEnglish (US)
Pages (from-to)1161-1166
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue numberPART 2
DOIs
StatePublished - 1997

Keywords

  • Doping
  • GaN
  • Sulfur

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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