GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update

Patrick Kung; Adam Saxler; Xiaolong Zhang; Danielle Walker; Manijeh Razeghi; Melville P. Ulmer

doi:10.1117/12.237696

GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update

Patrick Kung^*, Adam Saxler, Xiaolong Zhang, Danielle Walker, Manijeh Razeghi, Melville P. Ulmer

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

In SPIE Proceeding 2397 we demonstrated that there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors for astronomical purposes. We suggested that a particularly promising future technology is one based on the ability of investigators to produce high-quality films made of wide bandgap III-IV semiconductors. Here we report on significant progress we have made over the past year to fabricate and test single-pixel devices. The next step will be to measure and improve detective efficiency, measure the solar blindness over a larger dynamic range, and begin developing multiple-pixel designs.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	126-131
Number of pages	6
Volume	2685
ISBN (Print)	081942059X, 9780819420596
DOIs	https://doi.org/10.1117/12.237696
State	Published - 1996
Event	Photodetectors: Materials and Devices - San Jose, CA, USA Duration: Feb 1 1996 → Feb 2 1996

Other

Other	Photodetectors: Materials and Devices
City	San Jose, CA, USA
Period	2/1/96 → 2/2/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update",

abstract = "In SPIE Proceeding 2397 we demonstrated that there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors for astronomical purposes. We suggested that a particularly promising future technology is one based on the ability of investigators to produce high-quality films made of wide bandgap III-IV semiconductors. Here we report on significant progress we have made over the past year to fabricate and test single-pixel devices. The next step will be to measure and improve detective efficiency, measure the solar blindness over a larger dynamic range, and begin developing multiple-pixel designs.",

author = "Patrick Kung and Adam Saxler and Xiaolong Zhang and Danielle Walker and Manijeh Razeghi and Ulmer, {Melville P.}",

year = "1996",

doi = "10.1117/12.237696",

language = "English (US)",

isbn = "081942059X",

volume = "2685",

pages = "126--131",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Photodetectors: Materials and Devices ; Conference date: 01-02-1996 Through 02-02-1996",

}

Kung, P, Saxler, A, Zhang, X, Walker, D, Razeghi, M & Ulmer, MP 1996, GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2685, Society of Photo-Optical Instrumentation Engineers, pp. 126-131, Photodetectors: Materials and Devices, San Jose, CA, USA, 2/1/96. https://doi.org/10.1117/12.237696

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T1 - GaN, GaAlN, and AlN for use in UV detectors for astrophysics

T2 - Photodetectors: Materials and Devices

AU - Kung, Patrick

AU - Saxler, Adam

AU - Zhang, Xiaolong

AU - Walker, Danielle

AU - Razeghi, Manijeh

AU - Ulmer, Melville P.

PY - 1996

Y1 - 1996

N2 - In SPIE Proceeding 2397 we demonstrated that there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors for astronomical purposes. We suggested that a particularly promising future technology is one based on the ability of investigators to produce high-quality films made of wide bandgap III-IV semiconductors. Here we report on significant progress we have made over the past year to fabricate and test single-pixel devices. The next step will be to measure and improve detective efficiency, measure the solar blindness over a larger dynamic range, and begin developing multiple-pixel designs.

AB - In SPIE Proceeding 2397 we demonstrated that there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors for astronomical purposes. We suggested that a particularly promising future technology is one based on the ability of investigators to produce high-quality films made of wide bandgap III-IV semiconductors. Here we report on significant progress we have made over the past year to fabricate and test single-pixel devices. The next step will be to measure and improve detective efficiency, measure the solar blindness over a larger dynamic range, and begin developing multiple-pixel designs.

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DO - 10.1117/12.237696

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AN - SCOPUS:0029696249

SN - 081942059X

SN - 9780819420596

VL - 2685

SP - 126

EP - 131

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

Y2 - 1 February 1996 through 2 February 1996

ER -

GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update

Abstract

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