GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update

Patrick Kung*, Adam Saxler, Xiaolong Zhang, Danielle Walker, Manijeh Razeghi, Melville P. Ulmer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


In SPIE Proceeding 2397 we demonstrated that there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors for astronomical purposes. We suggested that a particularly promising future technology is one based on the ability of investigators to produce high-quality films made of wide bandgap III-IV semiconductors. Here we report on significant progress we have made over the past year to fabricate and test single-pixel devices. The next step will be to measure and improve detective efficiency, measure the solar blindness over a larger dynamic range, and begin developing multiple-pixel designs.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Number of pages6
ISBN (Print)081942059X, 9780819420596
StatePublished - 1996
EventPhotodetectors: Materials and Devices - San Jose, CA, USA
Duration: Feb 1 1996Feb 2 1996


OtherPhotodetectors: Materials and Devices
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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