GaN grown using trimethylgallium and triethylgallium

A. Saxler*, P. Kung, X. Zhang, D. Walker, J. Solomon, W. C. Mitchel, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

GaN films grown by low pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction, Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration.

Original languageEnglish (US)
Pages (from-to)1081-1086
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue numberPART 2
DOIs
StatePublished - 1997

Keywords

  • GaN
  • MOCVD
  • Triethylgallium
  • Trimethylgallium

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'GaN grown using trimethylgallium and triethylgallium'. Together they form a unique fingerprint.

Cite this