Abstract
GaN films grown by low pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction, Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1081-1086 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 258-263 |
| Issue number | PART 2 |
| DOIs | |
| State | Published - 1997 |
Keywords
- GaN
- MOCVD
- Triethylgallium
- Trimethylgallium
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering