GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

Dennis Szymanski, Dolar Khachariya, Tim B. Eldred, Pegah Bagheri, Shun Washiyama, Alexander Chang, Spyridon Pavlidis, Ronny Kirste, Pramod Reddy*, Erhard Kohn, Lincoln Lauhon, Ramon Collazo, Zlatko Sitar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We demonstrate a pathway employing crystal polarity controlled asymmetric impurity incorporation in the wide bandgap nitride material system to enable 3D doping control during the crystal growth process. The pathway involves polarity specific supersaturation modulated growth of lateral polar structures of alternating Ga- and N-polar GaN domains. A STEM technique of integrated differential phase contrast is used to image the atomic structure of the different polar domains and their single atomic plane boundaries. As a demonstration, 1 μm wide alternating Ga- and N-polar GaN domains exhibiting charge balanced and periodic domains for superjunction technology were grown. The challenges in characterizing the resulting 3D doping profile were addressed with atom probe tomography with atomic scale compositional resolution corroborating capacitance measurements and secondary-ion mass spectroscopy analysis.

Original languageEnglish (US)
Article number015703
JournalJournal of Applied Physics
Volume131
Issue number1
DOIs
StatePublished - Jan 7 2022

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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