GaN nanostructured p-i-n photodiodes

J. L. Pau; C. Bayram; P. Giedraitis; R. McClintock; M. Razeghi

doi:10.1063/1.3041641

GaN nanostructured p-i-n photodiodes

J. L. Pau, C. Bayram, P. Giedraitis, R. McClintock, M. Razeghi

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ∼200 nm diameter and 520 nm tall nanopillars on a 1 μm period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of 5 fA at -5 V. In contrast to conventional GaN diodes, nanostructured devices reproducibly show ideality factors lower than 2. Enhanced tunneling through sidewall surface states is proposed as the responsible mechanism for this behavior. Under backillumination, the quantum efficiency in nanostructured devices is partly limited by the collection efficiency of holes into the nanopillars.

Original language	English (US)
Article number	221104
Journal	Applied Physics Letters
Volume	93
Issue number	22
DOIs	https://doi.org/10.1063/1.3041641
State	Published - 2008

Funding

The authors would like to thank Y. Bai, and D. Hoffman for their assistance during the nanostructured device fabrication. The authors also acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J.L.P.).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "GaN nanostructured p-i-n photodiodes",

abstract = "We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ∼200 nm diameter and 520 nm tall nanopillars on a 1 μm period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of 5 fA at -5 V. In contrast to conventional GaN diodes, nanostructured devices reproducibly show ideality factors lower than 2. Enhanced tunneling through sidewall surface states is proposed as the responsible mechanism for this behavior. Under backillumination, the quantum efficiency in nanostructured devices is partly limited by the collection efficiency of holes into the nanopillars.",

author = "Pau, {J. L.} and C. Bayram and P. Giedraitis and R. McClintock and M. Razeghi",

note = "Funding Information: The authors would like to thank Y. Bai, and D. Hoffman for their assistance during the nanostructured device fabrication. The authors also acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J.L.P.).",

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language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - GaN nanostructured p-i-n photodiodes

AU - Pau, J. L.

AU - Bayram, C.

AU - Giedraitis, P.

AU - McClintock, R.

AU - Razeghi, M.

N1 - Funding Information: The authors would like to thank Y. Bai, and D. Hoffman for their assistance during the nanostructured device fabrication. The authors also acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J.L.P.).

PY - 2008

Y1 - 2008

N2 - We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ∼200 nm diameter and 520 nm tall nanopillars on a 1 μm period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of 5 fA at -5 V. In contrast to conventional GaN diodes, nanostructured devices reproducibly show ideality factors lower than 2. Enhanced tunneling through sidewall surface states is proposed as the responsible mechanism for this behavior. Under backillumination, the quantum efficiency in nanostructured devices is partly limited by the collection efficiency of holes into the nanopillars.

AB - We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ∼200 nm diameter and 520 nm tall nanopillars on a 1 μm period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of 5 fA at -5 V. In contrast to conventional GaN diodes, nanostructured devices reproducibly show ideality factors lower than 2. Enhanced tunneling through sidewall surface states is proposed as the responsible mechanism for this behavior. Under backillumination, the quantum efficiency in nanostructured devices is partly limited by the collection efficiency of holes into the nanopillars.

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GaN nanostructured p-i-n photodiodes

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