GaS and GaSe ultrathin layer transistors

Dattatray J. Late; Bin Liu; Jiajun Luo; Aiming Yan; H. S.S.Ramakrishna Matte; Matthew Grayson; C. N.R. Rao; Vinayak P. Dravid

doi:10.1002/adma.201201361

GaS and GaSe ultrathin layer transistors

Dattatray J. Late, Bin Liu, Jiajun Luo, Aiming Yan, H. S.S.Ramakrishna Matte, Matthew Grayson, C. N.R. Rao, Vinayak P. Dravid^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

605 Scopus citations

Abstract

Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.

Original language	English (US)
Pages (from-to)	3549-3554
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	26
DOIs	https://doi.org/10.1002/adma.201201361
State	Published - Jul 10 2012

Keywords

GaS
GaSe
layered materials
photodetectors
semiconductors
transistors

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201201361

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title = "GaS and GaSe ultrathin layer transistors",

abstract = "Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.",

keywords = "GaS, GaSe, layered materials, photodetectors, semiconductors, transistors",

author = "Late, {Dattatray J.} and Bin Liu and Jiajun Luo and Aiming Yan and Matte, {H. S.S.Ramakrishna} and Matthew Grayson and Rao, {C. N.R.} and Dravid, {Vinayak P.}",

year = "2012",

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doi = "10.1002/adma.201201361",

language = "English (US)",

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journal = "Advanced Materials",

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T1 - GaS and GaSe ultrathin layer transistors

AU - Late, Dattatray J.

AU - Liu, Bin

AU - Luo, Jiajun

AU - Yan, Aiming

AU - Matte, H. S.S.Ramakrishna

AU - Grayson, Matthew

AU - Rao, C. N.R.

AU - Dravid, Vinayak P.

PY - 2012/7/10

Y1 - 2012/7/10

N2 - Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.

AB - Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.

KW - GaS

KW - GaSe

KW - layered materials

KW - photodetectors

KW - semiconductors

KW - transistors

UR - http://www.scopus.com/inward/record.url?scp=84863670508&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863670508&partnerID=8YFLogxK

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DO - 10.1002/adma.201201361

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SN - 0935-9648

VL - 24

SP - 3549

EP - 3554

JO - Advanced Materials

JF - Advanced Materials

IS - 26

ER -

GaS and GaSe ultrathin layer transistors

Abstract

Keywords

ASJC Scopus subject areas

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