GaS and GaSe ultrathin layer transistors

Dattatray J. Late, Bin Liu, Jiajun Luo, Aiming Yan, H. S.S.Ramakrishna Matte, Matthew Grayson, C. N.R. Rao, Vinayak P. Dravid*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

551 Scopus citations


Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.

Original languageEnglish (US)
Pages (from-to)3549-3554
Number of pages6
JournalAdvanced Materials
Issue number26
StatePublished - Jul 10 2012


  • GaS
  • GaSe
  • layered materials
  • photodetectors
  • semiconductors
  • transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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