Gas source molecular beam epitaxy growth and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation-doped field-effect transistor structures

Cengiz Besikci*, Yavuz Civan, Serhat Ozder, Ozlem Sen, Chris Jelen, Steve Slivken, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Lattice-matched Ga0.51In0.49P/GaAs and strained Ga0.51In0.49P/InxGa1-xAs/GaAs (0.1 ≤ × ≤ 0.25) modulation-doped field-effect transistor structures were grown by gas source molecular beam epitaxy by using Si as dopant. Detailed electrical characterization results are presented. The Ga0.51In0.49P/In0.25Ga0.75As/GaAs sample yielded dark two-dimensional electron gas densities of 3.75 × 1012 cm-2 (300 K) and 2.3 × 1012 cm-2 (77 K) which are comparable to the highest sheet electron densities reported in AlGaAs/InGaAs/GaAs and InAlAs/InGaAs/InP modulation-doped heterostructures. Persistent photoconductivity was observed in the strained samples only. A 0.797 eV deep level has been detected in the undoped GaInP layers of the structures. Another level, with DLTS peak height dependent on the filling pulse width, has been detected at the interface of the strained samples. Based on the DLTS and Hall effect measurement results, this level, which seems to be the origin of persistent photoconductivity, can be attributed to the strain relaxation related defects.

Original languageEnglish (US)
Pages (from-to)1472-1478
Number of pages7
JournalSemiconductor Science and Technology
Volume12
Issue number11
DOIs
StatePublished - Nov 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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