Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors

M. Razeghi*, F. Omnes, P. Maurel, Y. J. Chan, D. Pavlidis

*Corresponding author for this work

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22 Scopus citations

Abstract

The authors report the fabrication of n-type GaInP/GaxIn 1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional gas field-effect transistors grown by low-pressure metallorganic chemical vapour deposition on GaAs semi-insulating substrates. The GaAs-GaInP devices demonstrate excellent operational performance at low temperature, due to the absence of deep traps in doped GaInP layers. The extrinsic transconductance is 163 mS mm-1 at 300 K and 213 mS mm-1 at 77 K. The threshold voltage of the devices biased in the dark at Vds=3 V was -3.34 V at 300 K and -3.38 at 77 K. Microwave measurements revealed cut-off frequencies fT of 17.8 GHz and fMAX of 23.5 GHz.

Original languageEnglish (US)
Article number006
Pages (from-to)103-107
Number of pages5
JournalSemiconductor Science and Technology
Volume6
Issue number2
DOIs
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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