The first fabrication is reported of a buried ridge structure Ga0·8In0·2As/GaAs/Ga0·51In0·49P laser emitting at 0·98 µm grown by two-step low pressure metal organic chemical vapour deposition. The width of the ridge is 2µm. Laser output power greater than 40 mW with a threshold current of 30 mA has been measured. A typical quantum efficiency of η = 60% was obtained without any facet coating. Excellent homogeneity and uniformity have been achieved over a wafer area of 10 cm2.
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering