Ga0·8ln0·2As/GaAs/Ga0·51ln0·49P BURIED RIDGE STRUCTURE SINGLE QUANTUM WELL LASER EMITTING AT 0·98µm

K. Mobarhan; M. Razeghi; R. Blondeau

doi:10.1049/el:19920959

Ga_0·8ln_0·2As/GaAs/Ga_0·51ln_0·49P BURIED RIDGE STRUCTURE SINGLE QUANTUM WELL LASER EMITTING AT 0·98µm

K. Mobarhan^*, M. Razeghi, R. Blondeau

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The first fabrication is reported of a buried ridge structure Ga_0·8In_0·2As/GaAs/Ga_0·51In_0·49P laser emitting at 0·98 µm grown by two-step low pressure metal organic chemical vapour deposition. The width of the ridge is 2µm. Laser output power greater than 40 mW with a threshold current of 30 mA has been measured. A typical quantum efficiency of η = 60% was obtained without any facet coating. Excellent homogeneity and uniformity have been achieved over a wafer area of 10 cm².

Original language	English (US)
Pages (from-to)	1510-1511
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	16
DOIs	https://doi.org/10.1049/el:19920959
State	Published - Jul 30 1992

Keywords

Lasers
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19920959

Cite this

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title = "Ga0·8ln0·2As/GaAs/Ga0·51ln0·49P BURIED RIDGE STRUCTURE SINGLE QUANTUM WELL LASER EMITTING AT 0·98µm",

abstract = "The first fabrication is reported of a buried ridge structure Ga0·8In0·2As/GaAs/Ga0·51In0·49P laser emitting at 0·98 µm grown by two-step low pressure metal organic chemical vapour deposition. The width of the ridge is 2µm. Laser output power greater than 40 mW with a threshold current of 30 mA has been measured. A typical quantum efficiency of η = 60% was obtained without any facet coating. Excellent homogeneity and uniformity have been achieved over a wafer area of 10 cm2.",

keywords = "Lasers, Semiconductor lasers",

author = "K. Mobarhan and M. Razeghi and R. Blondeau",

year = "1992",

month = jul,

day = "30",

doi = "10.1049/el:19920959",

language = "English (US)",

volume = "28",

pages = "1510--1511",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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T1 - Ga0·8ln0·2As/GaAs/Ga0·51ln0·49P BURIED RIDGE STRUCTURE SINGLE QUANTUM WELL LASER EMITTING AT 0·98µm

AU - Mobarhan, K.

AU - Razeghi, M.

AU - Blondeau, R.

PY - 1992/7/30

Y1 - 1992/7/30

N2 - The first fabrication is reported of a buried ridge structure Ga0·8In0·2As/GaAs/Ga0·51In0·49P laser emitting at 0·98 µm grown by two-step low pressure metal organic chemical vapour deposition. The width of the ridge is 2µm. Laser output power greater than 40 mW with a threshold current of 30 mA has been measured. A typical quantum efficiency of η = 60% was obtained without any facet coating. Excellent homogeneity and uniformity have been achieved over a wafer area of 10 cm2.

AB - The first fabrication is reported of a buried ridge structure Ga0·8In0·2As/GaAs/Ga0·51In0·49P laser emitting at 0·98 µm grown by two-step low pressure metal organic chemical vapour deposition. The width of the ridge is 2µm. Laser output power greater than 40 mW with a threshold current of 30 mA has been measured. A typical quantum efficiency of η = 60% was obtained without any facet coating. Excellent homogeneity and uniformity have been achieved over a wafer area of 10 cm2.

KW - Lasers

KW - Semiconductor lasers

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VL - 28

SP - 1510

EP - 1511

JO - Electronics Letters

JF - Electronics Letters

IS - 16

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