Si-doped gallium oxide (Ga2O3) thin films were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) and fabricated into metal oxide semiconductor field effect transistors (MOSFETs). The Ga2O3 MOSFETs exhibited effective gate modulation of the drain current with a complete channel pinch-off for VG <-25 V, and the three-terminal off-state breakdown voltage was 390 V. The device shows a very low gate leakage current (∼50 pA mm-1), which led to a high on/off ratio of ∼108. These transistor characteristics were stable from room temperature to 250°C.
- gallium oxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry