Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors

Qing Cao, Minggang Xia, Coskun Kocabas, Moonsub Shim, John A. Rogers*, Slava V. Rotkin

*Corresponding author for this work

Research output: Contribution to journalArticle

149 Scopus citations

Abstract

The electrostatic coupling between singled-walled carbon nanotube (SWCNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some dependence on the distribution of these spacings. Experiments on transistors that use submonolayer, random networks of SWCNTs verify certain aspects of these calculations. The results are important for the development of networks or arrays of nanotubes as active layers in TFTs and other electronic devices.

Original languageEnglish (US)
Article number023516
JournalApplied Physics Letters
Volume90
Issue number2
DOIs
StatePublished - Jan 22 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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