Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics

Antonio Facchetti*, Myung Han Yoon, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

1020 Scopus citations

Abstract

In this contribution we review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin-film transistors (OTFTs) for organic electronics. After a general introduction to OTFT materials, operating principles, and processing requirements for optimizing low-cost organic electronics, this review focuses on three classes of OTFT-compatible dielectrics: i) inorganic (high-k) materials; ii) polymeric materials; and iii) self-assembled mono- and/multilayer materials. The principal goals in this active research area are tunable and reduced OTFT operating voltages, leading to decreased device power consumption while providing excellent dielectric/insulator properties and efficient low-cost solution-phase processing characteristics.

Original languageEnglish (US)
Pages (from-to)1705-1725
Number of pages21
JournalAdvanced Materials
Volume17
Issue number14
DOIs
StatePublished - Jul 18 2005

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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