@inproceedings{7829ca49200f41d794f04f7eff36dd70,
title = "Gate-tunable memristors from monolayer MoS2",
abstract = "We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of poly crystalline MoS2 films with grain sizes of 3-5 μm. The device characteristics show switching ratios up to ∼500, with the resistance in individual states being continuously gate-tunable by over three orders of magnitude. The resistive switching results from dynamically varying threshold voltage and Schottky barrier heights, whose underlying physical mechanism appears to be vacancy migration and/or charge trapping. Top-gated devices achieve reversible tuning of threshold voltage, with potential utility in non-volatile memory or neuromorphic architectures.",
author = "Sangwan, {Vinod K.} and Lee, {Hong Sub} and Hersam, {Mark C.}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 63rd IEEE International Electron Devices Meeting, IEDM 2017 ; Conference date: 02-12-2017 Through 06-12-2017",
year = "2018",
month = jan,
day = "23",
doi = "10.1109/IEDM.2017.8268330",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "5.1.1--5.1.4",
booktitle = "2017 IEEE International Electron Devices Meeting, IEDM 2017",
address = "United States",
}