Gate-tunable memristors from monolayer MoS2

Vinod K. Sangwan, Hong Sub Lee, Mark C. Hersam*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We report here gate-tunable memristors based on monolayer MoS2grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2films with grain sizes of 3-5 μm. The device characteristics show switching ratios up to ∼500, with the resistance in individual states being continuously gate-tunable by over three orders of magnitude. The resistive switching results from dynamically varying threshold voltage and Schottky barrier heights, whose underlying physical mechanism appears to be vacancy migration and/or charge trapping. Top-gated devices achieve reversible tuning of threshold voltage, with potential utility in non-volatile memory or neuromorphic architectures.

Original languageEnglish (US)
JournalUnknown Journal
StatePublished - Feb 21 2018

ASJC Scopus subject areas

  • General

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