Ga//xIn//1// minus //xAs//yP//1// minus //y-InP, DH LASERS EMITTING AT 1. 3 mu m GROWN ON GaAs SUBSTRATES BY LP-MOCVD GROWTH TECHNIQUE.

M. Razeghi*, R. Blondeau, J. P. Duchemin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

LP-MOCVD has been used for the growth of good quality GaAs layers on InP substrates and InP layers on GaAs substrates. The morphology of these layers were excellent and x-ray diffraction measurements show that the InP or GaAs layers are monocrystalline. The near gap luminescence spectrum of an InP layer grown on a GaAs substrate by LP-MOCVD, which is exciton related, is shown. GaInAsP-InP buried ridge structure (BRS) lasers emitting at 1. 3 mu m have been fabricated on GaAs substrates, using the LP-MOCVD growth technique. Pulse threshold current of 190 mA at room temperature has been measured with an output power up to 10 mW.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages679-680
Number of pages2
Edition74
StatePublished - Dec 1 1985

Publication series

NameInstitute of Physics Conference Series
Number74
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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