Ga//xIn//1// minus //xAs//yP//1// minus //y-InP, DH LASERS EMITTING AT 1. 3 mu m GROWN ON GaAs SUBSTRATES BY LP-MOCVD GROWTH TECHNIQUE.

M. Razeghi*, R. Blondeau, J. P. Duchemin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

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Physics & Astronomy