Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm

Lakshay Gautam; Alexandre Guillaume Jaud; Junhee Lee; Gail J. Brown; Manijeh Razeghi

doi:10.1109/JQE.2020.3048701

Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm

Lakshay Gautam, Alexandre Guillaume Jaud, Junhee Lee, Gail J. Brown, Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We report the Geiger mode operation of back-illuminated AlGaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back-illumination to leverage hole-initiated multiplication. The spectral response was analyzed with a peak detection wavelength of 255 nm with an external quantum efficiency of 14% at zero bias. Low-photon detection capabilities were demonstrated in devices with areas $25~\mu \text{m} \times 25~\mu \text{m}$. Single photon detection efficiencies of 5% were achieved.

Original language	English (US)
Article number	9312181
Journal	IEEE Journal of Quantum Electronics
Volume	57
Issue number	2
DOIs	https://doi.org/10.1109/JQE.2020.3048701
State	Published - Apr 2021

Funding

Manuscript received November 18, 2020; revised December 18, 2020; accepted December 24, 2020. Date of publication January 1, 2021; date of current version January 19, 2021. This work was supported by the Defense Advanced Research Projects Agency (DARPA). (Corresponding author: Manijeh Razeghi.) The authors are with the Center for Quantum Devices, Department of Electrical Engineering, Northwestern University, Evanston, IL 60208 USA (e-mail: [email protected]).

Keywords

Aluminum gallium nitride
avalanche breakdown
p-i-n diodes
photodetectors
ultraviolet

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2020.3048701

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title = "Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm",

abstract = "We report the Geiger mode operation of back-illuminated AlGaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back-illumination to leverage hole-initiated multiplication. The spectral response was analyzed with a peak detection wavelength of 255 nm with an external quantum efficiency of 14% at zero bias. Low-photon detection capabilities were demonstrated in devices with areas $25~\mu \text{m} \times 25~\mu \text{m}$. Single photon detection efficiencies of 5% were achieved.",

keywords = "Aluminum gallium nitride, avalanche breakdown, p-i-n diodes, photodetectors, ultraviolet",

author = "Lakshay Gautam and Jaud, {Alexandre Guillaume} and Junhee Lee and Brown, {Gail J.} and Manijeh Razeghi",

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AU - Brown, Gail J.

AU - Razeghi, Manijeh

PY - 2021/4

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AB - We report the Geiger mode operation of back-illuminated AlGaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back-illumination to leverage hole-initiated multiplication. The spectral response was analyzed with a peak detection wavelength of 255 nm with an external quantum efficiency of 14% at zero bias. Low-photon detection capabilities were demonstrated in devices with areas $25~\mu \text{m} \times 25~\mu \text{m}$. Single photon detection efficiencies of 5% were achieved.

KW - Aluminum gallium nitride

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KW - p-i-n diodes

KW - photodetectors

KW - ultraviolet

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Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm

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