Generalized stacking-fault energetics and dislocation properties: Compact versus spread unit-dislocation structures in TiAl and CuAu

Oleg N. Mryasov*, Yu N. Gornostyrev, A. J. Freeman

*Corresponding author for this work

Research output: Contribution to journalArticle

64 Scopus citations

Abstract

We present a general scheme for analyzing the structure and mobility of dislocations based on solutions of the Peierls-Nabarro model with a two component displacement field and restoring forces determined from the ab initio generalized stacking fault energetics (i.e., the so-called γ surface). The approach is used to investigate dislocations in L10 TiAl and CuAu; predicted differences in the unit dislocation properties are explicitly related with features of the γ-surface geometry. A unified description of compact, spread and split dislocation cores is provided with an important characteristic "dissociation path" revealed by this highly tractable scheme.

Original languageEnglish
Pages (from-to)11927-11932
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number18
StatePublished - Nov 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Generalized stacking-fault energetics and dislocation properties: Compact versus spread unit-dislocation structures in TiAl and CuAu'. Together they form a unique fingerprint.

  • Cite this