Abstract
We present a general scheme for analyzing the structure and mobility of dislocations based on solutions of the Peierls-Nabarro model with a two component displacement field and restoring forces determined from the ab initio generalized stacking fault energetics (i.e., the so-called γ surface). The approach is used to investigate dislocations in L10 TiAl and CuAu; predicted differences in the unit dislocation properties are explicitly related with features of the γ-surface geometry. A unified description of compact, spread and split dislocation cores is provided with an important characteristic "dissociation path" revealed by this highly tractable scheme.
| Original language | English |
|---|---|
| Pages (from-to) | 11927-11932 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 58 |
| Issue number | 18 |
| State | Published - Nov 1 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Mryasov, O. N., Gornostyrev, Y. N., & Freeman, A. J. (1998). Generalized stacking-fault energetics and dislocation properties: Compact versus spread unit-dislocation structures in TiAl and CuAu. Physical Review B - Condensed Matter and Materials Physics, 58(18), 11927-11932.