We present a general scheme for analyzing the structure and mobility of dislocations based on solutions of the Peierls-Nabarro model with a two component displacement field and restoring forces determined from the ab initio generalized stacking fault energetics (i.e., the so-called γ surface). The approach is used to investigate dislocations in L10 TiAl and CuAu; predicted differences in the unit dislocation properties are explicitly related with features of the γ-surface geometry. A unified description of compact, spread and split dislocation cores is provided with an important characteristic "dissociation path" revealed by this highly tractable scheme.
|Number of pages||6|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Nov 1 1998|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics