Generating ∼90 nanometer features using near-field contact-mode photolithography with an elastomeric phase mask

John A. Rogers*, Kateri E. Paul, Rebecca J. Jackman, George M. Whitesides

*Corresponding author for this work

Research output: Contribution to journalArticle

111 Scopus citations

Abstract

This article describes a near-field photolithographic method that uses an elastomeric phase mask in conformal contact with photoresist. The method is capable of generating ∼90 nm lines in commercially available photoresist, using broadband, incoherent light with wavelengths between 330 and 460 nm. Transfer of these patterns into silicon dioxide and gold demonstrates the integrity of the patterned resist.

Original languageEnglish (US)
Pages (from-to)59-68
Number of pages10
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number1
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

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