Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice

F. Callewaert, A. M. Hoang, Manijeh Razeghi

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

A long wavelength infrared minority electron unipolar photodetector based on InAs/GaSb type-II superlattices is demonstrated. At 77K, a dark current of 3×10-5A/cm2 and a differential resistance-area of 3700Ω.cm2 are achieved at the turn-on bias, with a 50%-cutoff of 10.0μm and a specific detectivity of 6.2×1011Jones. The dark current is fitted as a function of bias and temperature using a model combining generation-recombination and trap-assisted tunneling. Good agreement was observed between the theory and the experimental dark current.

Original languageEnglish (US)
Article number053508
JournalApplied Physics Letters
Volume104
Issue number5
DOIs
StatePublished - Jan 1 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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