@inbook{7e34fa91bf594758aa68b8fade98a754,
title = "Germanium-based porous semiconductors from molecular Zintl anions",
abstract = "This review highlights how molecular Zintl compounds can be used to create new materials with a variety of novel opto-electronic and gas absorption properties. The generality of the synthetic approach described in this chapter on coupling various group-IV Zintl clusters provides an important tool for the design of new kinds of periodically ordered mesoporous semiconductors with tunable chemical and physical properties. We illustrate the potential of Zintl compounds to produce highly porous non-oxidic semiconductors, and we also cover the recent advances in the development of mesoporous elemental-based, metal-chalcogenide, and binary intermetallic alloy materials. The principles behind this approach and some perspectives for application of the derived materials are discussed.",
keywords = "Chalcogenide, Germanium compound, Mesoporous semiconductor, Self-assembly, Zintl compound",
author = "Armatas, {Gerasimos S.} and Kanatzidis, {Mercouri G.}",
note = "Funding Information: These studies were supported primarily by the Nanoscale Science and Engineering Initiative of the National Science Foundation under NSF Award Number EEC-0647560. This work made use of the J.B. Cohen X-ray Diffraction facility and the Electron Probe Instrumentation Center (EPIC) and Keck Interdisciplinary Surface Science (Keck-II) facility of NUANCE center at Northwestern University.",
year = "2011",
doi = "10.1007/430_2010_22",
language = "English (US)",
isbn = "9783642211805",
series = "Structure and Bonding",
pages = "133--154",
editor = "Thomas Fassler",
booktitle = "Zintl Ions",
}