Gettering of epitaxial gallium phosphide using phosphosilicate glass

Bruce W. Wessels

doi:10.1049/el:19790535

Gettering of epitaxial gallium phosphide using phosphosilicate glass

Bruce W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Chemically vapour deposited phosphosilicate glass films were used to getter epitaxial gallium-phosphide layers. Significant improvements in the electroluminescent efficiency of yellow light-emitting diodes fabricated from the gettered material were observed. Results suggest that the gettering removes compensating impurities as well defects which influence minority carrier lifetime.

Original language	English (US)
Pages (from-to)	748-749
Number of pages	2
Journal	Electronics Letters
Volume	15
Issue number	23
DOIs	https://doi.org/10.1049/el:19790535
State	Published - Nov 8 1979

Keywords

Carrier lifetime
Electroluminescence
Gallium compounds
Getters
Light-emitting diodes
Phosphosilicate glasses

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19790535

Cite this

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title = "Gettering of epitaxial gallium phosphide using phosphosilicate glass",

abstract = "Chemically vapour deposited phosphosilicate glass films were used to getter epitaxial gallium-phosphide layers. Significant improvements in the electroluminescent efficiency of yellow light-emitting diodes fabricated from the gettered material were observed. Results suggest that the gettering removes compensating impurities as well defects which influence minority carrier lifetime.",

keywords = "Carrier lifetime, Electroluminescence, Gallium compounds, Getters, Light-emitting diodes, Phosphosilicate glasses",

author = "Wessels, {Bruce W.}",

year = "1979",

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doi = "10.1049/el:19790535",

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N2 - Chemically vapour deposited phosphosilicate glass films were used to getter epitaxial gallium-phosphide layers. Significant improvements in the electroluminescent efficiency of yellow light-emitting diodes fabricated from the gettered material were observed. Results suggest that the gettering removes compensating impurities as well defects which influence minority carrier lifetime.

AB - Chemically vapour deposited phosphosilicate glass films were used to getter epitaxial gallium-phosphide layers. Significant improvements in the electroluminescent efficiency of yellow light-emitting diodes fabricated from the gettered material were observed. Results suggest that the gettering removes compensating impurities as well defects which influence minority carrier lifetime.

KW - Carrier lifetime

KW - Electroluminescence

KW - Gallium compounds

KW - Getters

KW - Light-emitting diodes

KW - Phosphosilicate glasses

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DO - 10.1049/el:19790535

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Gettering of epitaxial gallium phosphide using phosphosilicate glass

Abstract

Keywords

ASJC Scopus subject areas

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