Gettering of epitaxial gallium phosphide using phosphosilicate glass

Bruce W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Chemically vapour deposited phosphosilicate glass films were used to getter epitaxial gallium-phosphide layers. Significant improvements in the electroluminescent efficiency of yellow light-emitting diodes fabricated from the gettered material were observed. Results suggest that the gettering removes compensating impurities as well defects which influence minority carrier lifetime.

Original languageEnglish (US)
Pages (from-to)748-749
Number of pages2
JournalElectronics Letters
Volume15
Issue number23
DOIs
StatePublished - Nov 8 1979

Keywords

  • Carrier lifetime
  • Electroluminescence
  • Gallium compounds
  • Getters
  • Light-emitting diodes
  • Phosphosilicate glasses

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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