Giant magnetoresistance of magnetic semiconductor heterojunctions

N. Rangaraju*, Pengcheng Li, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The giant magnetoresistance characteristics of magnetic III-V semiconductor p-n heterojunctions are described. The origin of the extremely large positive magnetoresistance (2680%) observed at room temperature and at a field of 18 T is attributed to efficient spin-polarized carrier transport. The magnetocurrent ratio of the junction saturates with magnetic field. The field dependence of the magnetoresistance points to the existence of a paramagnetic component, which determines the degree of spin polarization of the junction current. This work indicates that highly spin-polarized magnetic semiconductor heterojunction devices that operate at room temperature can be realized.

Original languageEnglish (US)
Article number205209
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number20
DOIs
StatePublished - May 1 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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