Giant voltage modulation of magnetic anisotropy in strained heavy metal/magnet/insulator heterostructures

P. V. Ong, Nicholas Kioussis, D. Odkhuu, P. Khalili Amiri, K. L. Wang, Gregory P. Carman

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

Ab initio electronic structure calculations reveal that epitaxial strain has a dramatic effect on the voltage-controlled magnetic anisotropy (VCMA) in Ta/FeCo/MgO junctions. Strain can give rise to a wide range of novel VCMA behaviors where the MA can change from a - to a -shape electric-field dependence with giant VCMA coefficients which are asymmetric under voltage reversal. The underlying mechanism is the interplay of the strain- and electric-field-induced changes in the spin-orbit coupled d states at the interfaces and the strain-induced modification of the dielectric constant of MgO. These findings demonstrate the feasibility of highly sensitive VCMA through strain engineering, which may provide a viable avenue for tailoring magnetoelectric properties for spintronic applications.

Original languageEnglish (US)
Article number020407
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number2
DOIs
StatePublished - Jul 20 2015

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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