Glancing-angle ion-assisted deposition of ZnO thin films

K. C. Ruthe; S. A. Barnett

doi:10.1016/S0039-6028(03)00601-0

Glancing-angle ion-assisted deposition of ZnO thin films

K. C. Ruthe, S. A. Barnett^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Undoped ZnO thin films were deposited on unheated sapphire and glass substrates under concurrent glancing-angle Ar⁺ ion bombardment. Surface roughness decreased from 18 to 3.5 nm in films grown on glass, and from 11 to 0.5 nm on sapphire, as the ion-to-neutral atom ratio increased from 0 to 0.25. Film microstructure observations by cross-sectional electron microscopy indicated increased film density when glancing-angle ions were used. The glancing-angle ions had little effect on film residual stress; this is in contrast to normal-incidence ion bombardment that typically increases compressive stresses.

Original language	English (US)
Pages (from-to)	L460-L464
Journal	Surface Science
Volume	538
Issue number	1-2
DOIs	https://doi.org/10.1016/S0039-6028(03)00601-0
State	Published - Jul 10 2003

Funding

The authors gratefully acknowledge the financial support of National Science Foundation grant number DMR-9810058, and the MRSEC program (DMR-0076097) at the Materials Research Center of Northwestern University.

Keywords

Atomic force microscopy
Electron microscopy
Ion bombardment
Sputter deposition
Surface structure, morphology, roughness, and topography
X-ray scattering, diffraction, and reflection
Zinc oxide

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(03)00601-0

Cite this

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title = "Glancing-angle ion-assisted deposition of ZnO thin films",

abstract = "Undoped ZnO thin films were deposited on unheated sapphire and glass substrates under concurrent glancing-angle Ar+ ion bombardment. Surface roughness decreased from 18 to 3.5 nm in films grown on glass, and from 11 to 0.5 nm on sapphire, as the ion-to-neutral atom ratio increased from 0 to 0.25. Film microstructure observations by cross-sectional electron microscopy indicated increased film density when glancing-angle ions were used. The glancing-angle ions had little effect on film residual stress; this is in contrast to normal-incidence ion bombardment that typically increases compressive stresses.",

keywords = "Atomic force microscopy, Electron microscopy, Ion bombardment, Sputter deposition, Surface structure, morphology, roughness, and topography, X-ray scattering, diffraction, and reflection, Zinc oxide",

author = "Ruthe, {K. C.} and Barnett, {S. A.}",

note = "Funding Information: The authors gratefully acknowledge the financial support of National Science Foundation grant number DMR-9810058, and the MRSEC program (DMR-0076097) at the Materials Research Center of Northwestern University. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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T1 - Glancing-angle ion-assisted deposition of ZnO thin films

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AU - Barnett, S. A.

N1 - Funding Information: The authors gratefully acknowledge the financial support of National Science Foundation grant number DMR-9810058, and the MRSEC program (DMR-0076097) at the Materials Research Center of Northwestern University. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2003/7/10

Y1 - 2003/7/10

N2 - Undoped ZnO thin films were deposited on unheated sapphire and glass substrates under concurrent glancing-angle Ar+ ion bombardment. Surface roughness decreased from 18 to 3.5 nm in films grown on glass, and from 11 to 0.5 nm on sapphire, as the ion-to-neutral atom ratio increased from 0 to 0.25. Film microstructure observations by cross-sectional electron microscopy indicated increased film density when glancing-angle ions were used. The glancing-angle ions had little effect on film residual stress; this is in contrast to normal-incidence ion bombardment that typically increases compressive stresses.

AB - Undoped ZnO thin films were deposited on unheated sapphire and glass substrates under concurrent glancing-angle Ar+ ion bombardment. Surface roughness decreased from 18 to 3.5 nm in films grown on glass, and from 11 to 0.5 nm on sapphire, as the ion-to-neutral atom ratio increased from 0 to 0.25. Film microstructure observations by cross-sectional electron microscopy indicated increased film density when glancing-angle ions were used. The glancing-angle ions had little effect on film residual stress; this is in contrast to normal-incidence ion bombardment that typically increases compressive stresses.

KW - Atomic force microscopy

KW - Electron microscopy

KW - Ion bombardment

KW - Sputter deposition

KW - Surface structure, morphology, roughness, and topography

KW - X-ray scattering, diffraction, and reflection

KW - Zinc oxide

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JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Glancing-angle ion-assisted deposition of ZnO thin films

Abstract

Funding

Keywords

ASJC Scopus subject areas

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