Experiments were performed in a molecular beam epitaxy (MBE) chamber using Ga and As4 beams to account for the effects of glancing-angle ions on GaAs(001) homoepitaxy. The scattered ion beam was used to measure surface diffusion and growth oscillations. Results suggest that glancing-angle ion momentum can be coupled selectivity to adatoms.
ASJC Scopus subject areas
- Physics and Astronomy(all)