Glancing-angle ion enhanced surface diffusion on GaAs(001) during molecular beam epitaxy

P. M. DeLuca*, K. C. Ruthe, Scott A Barnett

*Corresponding author for this work

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Experiments were performed in a molecular beam epitaxy (MBE) chamber using Ga and As4 beams to account for the effects of glancing-angle ions on GaAs(001) homoepitaxy. The scattered ion beam was used to measure surface diffusion and growth oscillations. Results suggest that glancing-angle ion momentum can be coupled selectivity to adatoms.

Original languageEnglish (US)
Pages (from-to)260-263
Number of pages4
JournalPhysical Review Letters
Volume86
Issue number2
DOIs
StatePublished - Jan 8 2001

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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