Grain-boundary dissociation by the emission of stacking faults

J. Rittner, D. Seidman, K. Merkle

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Abstract

A range of (Formula presented) symmetric tilt grain boundaries (GBșs) are investigated in several fcc metals with simulations and high-resolution electron microscopy. Boundaries with tilt angles between 50.5° and 109.5° dissociate into two boundaries 0.6 to 1.1 nm apart. The dissociation takes place by the emission of stacking faults from one boundary that are terminated by Shockley partials at a second boundary. This is a general mode of GB relaxation for low stacking fault energy metals. The reasons for the occurrence of this relaxation mode are discussed using the theory of GB dislocations.

Original languageEnglish (US)
Pages (from-to)R4241-R4244
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number8
DOIs
StatePublished - Jan 1 1996

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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