Graphene-Silicon Heterostructures at the Two-Dimensional Limit

Brian Kiraly, Andrew J. Mannix, Mark Hersam*, Nathan P. Guisinger

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

The integration of heterogeneous two-dimensional materials has the potential to yield electronic behavior approaching theoretical limits and facilitate the exploration of new fundamental physical phenomena. Here, we report the integration of graphene with two-dimensional, semiconducting crystalline silicon. Sequential deposition of carbon and silicon on Ag(111) in ultrahigh vacuum results in the synthesis of both lateral and vertical graphene-silicon heterostructures. The one-dimensional in-plane interfaces demonstrate atomically precise material transitions both structurally and electronically. The vertical heterostructures show noninteracting van der Waals behavior as shown by energetically resolved scanning tunneling microscopy coupled with ex-situ Raman analysis. The pristine and direct integration of graphene with two-dimensional, semiconducting crystalline silicon couples two of the most studied electronic materials into a hybrid structure with high potential for next-generation nanoelectronics.

Original languageEnglish (US)
Pages (from-to)6085-6090
Number of pages6
JournalChemistry of Materials
Volume27
Issue number17
DOIs
StatePublished - Sep 8 2015

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemical Engineering(all)
  • Chemistry(all)

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