CROISSANCE DE InP, GaInAs ET GaInAsP PAR LA METHODE DES ORGANOMETALLIQUES SOUS PRESSION REDUITE.

Translated title of the contribution: Growing of InP, GaInAs and GaInAsP by the Organometallic Method under Low Pressure.

Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Use of low pressure metallorganic chemical vapor deposition for the growth of excellent high quality non-intentionally doped Inp, GaInAs and GaInAsP over an area of 10 cm**2 is reported.

Translated title of the contributionGrowing of InP, GaInAs and GaInAsP by the Organometallic Method under Low Pressure.
Original languageFrench
Pages (from-to)59-86
Number of pages28
JournalRevue technique - Thomson-CSF
Volume15
Issue number1
StatePublished - Jan 1 1983

ASJC Scopus subject areas

  • Engineering(all)

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