Growth and characterization of BRS GaInAsP-GaAs laser emitting at 0.8μm by gas-source molecular beam epitaxy

C. Jelen*, Steven Boyd Slivken, J. Diaz, M. Erdtmann, S. Kim, Donghai Wu, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

GaInAsP-GaAs buried ridge structure lasers emitting at 0.8μm have been fabricated on material grown in two steps by low pressure metallorganic chemical vapor deposition and gas-source molecular beam epitaxy. Preliminary laser results are reported, and the feasibility of using gas-source molecular beam epitaxy for the regrowth of sophisticated laser system is demonstrated.

Original languageEnglish (US)
Pages (from-to)147-152
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume417
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Growth and characterization of BRS GaInAsP-GaAs laser emitting at 0.8μm by gas-source molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this