Growth and characterization of heteroepitaxial zinc selenide

Paul Besomi*, Brude W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

ZnSe has been heteroepitaxially deposited on GaAs substrates by vapor transport using hydrogen in an open tube reactor. A quasi-equilibrium model explains quantitatively the source transport reaction over the temperature range studied. It is shown that the substrate surface processes limit the growth rate in the deposition region. The activation energy for the surface reaction is 26 kcal/mole. Capacitance-voltage measurements on ZnSe/GaAs heterojunctions indicated that the layers are homogenously doped and an abrupt heterojunction is observed.

Original languageEnglish (US)
Pages (from-to)477-484
Number of pages8
JournalJournal of Crystal Growth
Volume55
Issue number3
DOIs
StatePublished - Dec 1981

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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