Growth and characterization of heteroepitaxial ZnO thin films by organometallic chemical vapor deposition

P. Souletie; S. Bethke; B. W. Wessels; H. Pan

doi:10.1016/0022-0248(90)90724-Y

Growth and characterization of heteroepitaxial ZnO thin films by organometallic chemical vapor deposition

P. Souletie^*, S. Bethke, B. W. Wessels, H. Pan

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

High-conductivity ZnO films have been deposited on sapphire substrates using organometallic chemical vapor deposition at atmospheric pressure. Unintentionally doped films had net donor concentrations of 10¹⁷-10²⁰ cm^-3 and resistivities of 10^-3-1 Ω cm. Resistivity was found to be dependent upon oxidant partial pressure present during deposition. Photoluminescence spectroscopy at 16 K indicated the presence of strong near band edge emission at 3.36 eV in addition to deep level emission peaks at 1.8, 2.1 and 2.4 eV.

Original language	English (US)
Pages (from-to)	248-251
Number of pages	4
Journal	Journal of Crystal Growth
Volume	86
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(90)90724-Y
State	Published - Jan 1 1988

Funding

The authors thank J. Bisberg for numerous discussions concerning oxide semiconductor growth. The Division of Basic Energy Sciences of the Department of Energy supported this work under contract DE-FGO2-85ER45209. The central facilities of the Materials Research Center at Northwestern University sponsored in part by the NSF under grant DMR8520280 were used throughout this project.

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(90)90724-Y

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title = "Growth and characterization of heteroepitaxial ZnO thin films by organometallic chemical vapor deposition",

abstract = "High-conductivity ZnO films have been deposited on sapphire substrates using organometallic chemical vapor deposition at atmospheric pressure. Unintentionally doped films had net donor concentrations of 1017-1020 cm-3 and resistivities of 10-3-1 Ω cm. Resistivity was found to be dependent upon oxidant partial pressure present during deposition. Photoluminescence spectroscopy at 16 K indicated the presence of strong near band edge emission at 3.36 eV in addition to deep level emission peaks at 1.8, 2.1 and 2.4 eV.",

author = "P. Souletie and S. Bethke and Wessels, {B. W.} and H. Pan",

note = "Funding Information: The authors thank J. Bisberg for numerous discussions concerning oxide semiconductor growth. The Division of Basic Energy Sciences of the Department of Energy supported this work under contract DE-FGO2-85ER45209. The central facilities of the Materials Research Center at Northwestern University sponsored in part by the NSF under grant DMR8520280 were used throughout this project.",

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doi = "10.1016/0022-0248(90)90724-Y",

language = "English (US)",

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T1 - Growth and characterization of heteroepitaxial ZnO thin films by organometallic chemical vapor deposition

AU - Souletie, P.

AU - Bethke, S.

AU - Wessels, B. W.

AU - Pan, H.

N1 - Funding Information: The authors thank J. Bisberg for numerous discussions concerning oxide semiconductor growth. The Division of Basic Energy Sciences of the Department of Energy supported this work under contract DE-FGO2-85ER45209. The central facilities of the Materials Research Center at Northwestern University sponsored in part by the NSF under grant DMR8520280 were used throughout this project.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - High-conductivity ZnO films have been deposited on sapphire substrates using organometallic chemical vapor deposition at atmospheric pressure. Unintentionally doped films had net donor concentrations of 1017-1020 cm-3 and resistivities of 10-3-1 Ω cm. Resistivity was found to be dependent upon oxidant partial pressure present during deposition. Photoluminescence spectroscopy at 16 K indicated the presence of strong near band edge emission at 3.36 eV in addition to deep level emission peaks at 1.8, 2.1 and 2.4 eV.

AB - High-conductivity ZnO films have been deposited on sapphire substrates using organometallic chemical vapor deposition at atmospheric pressure. Unintentionally doped films had net donor concentrations of 1017-1020 cm-3 and resistivities of 10-3-1 Ω cm. Resistivity was found to be dependent upon oxidant partial pressure present during deposition. Photoluminescence spectroscopy at 16 K indicated the presence of strong near band edge emission at 3.36 eV in addition to deep level emission peaks at 1.8, 2.1 and 2.4 eV.

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Growth and characterization of heteroepitaxial ZnO thin films by organometallic chemical vapor deposition

Abstract

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