Growth and characterization of heteroepitaxial ZnO thin films by organometallic chemical vapor deposition

P. Souletie*, S. Bethke, Bruce W Wessels, H. Pan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

High-conductivity ZnO films have been deposited on sapphire substrates using organometallic chemical vapor deposition at atmospheric pressure. Unintentionally doped films had net donor concentrations of 1017-1020 cm-3 and resistivities of 10-3-1 Ω cm. Resistivity was found to be dependent upon oxidant partial pressure present during deposition. Photoluminescence spectroscopy at 16 K indicated the presence of strong near band edge emission at 3.36 eV in addition to deep level emission peaks at 1.8, 2.1 and 2.4 eV.

Original languageEnglish (US)
Pages (from-to)248-251
Number of pages4
JournalJournal of Crystal Growth
Volume86
Issue number1-4
DOIs
StatePublished - Jan 1 1990

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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