The purpose of this paper is the description of the growth and characterization of high quality InP/Ga0.25In0.75As0.5P0.5 (λ=1.3 μm) and InP/Ga0.17In0.83As0.35P0.65 (λ=1.15 μm) grown by the LP-MOCVD technique using trimethylindium as indium source triethylgallium as gallium source and the hydrides AsH3 and PH3 as V-elements sources, arsenic and phosphorus.
|Translated title of the contribution||Growth and characterization of high quality InP/GaInAsP (λ=1.3 and 1.15 μm) grown by the LP-MOCVD technique|
|Number of pages||19|
|Journal||Revue technique - Thomson-CSF|
|State||Published - Sep 1 1989|
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