Croissance et caracterisation d'alliages GaInAsP de gaps egaux a 1,3 et 1,15 μm elabores par LP-MOCVD

M. Defour; F. Omnes; P. Maurel; M. Razeghi

Croissance et caracterisation d'alliages GaInAsP de gaps egaux a 1,3 et 1,15 μm elabores par LP-MOCVD

Translated title of the contribution: Growth and characterization of high quality InP/GaInAsP (λ=1.3 and 1.15 μm) grown by the LP-MOCVD technique

M. Defour^*, F. Omnes, P. Maurel, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The purpose of this paper is the description of the growth and characterization of high quality InP/Ga_0.25In_0.75As_0.5P_0.5 (λ=1.3 μm) and InP/Ga_0.17In_0.83As_0.35P_0.65 (λ=1.15 μm) grown by the LP-MOCVD technique using trimethylindium as indium source triethylgallium as gallium source and the hydrides AsH₃ and PH₃ as V-elements sources, arsenic and phosphorus.

Translated title of the contribution	Growth and characterization of high quality InP/GaInAsP (λ=1.3 and 1.15 μm) grown by the LP-MOCVD technique
Original language	French
Pages (from-to)	387-405
Number of pages	19
Journal	Revue technique - Thomson-CSF
Volume	20-21
Issue number	3
State	Published - Sep 1 1989

ASJC Scopus subject areas

General Engineering

Cite this

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abstract = "The purpose of this paper is the description of the growth and characterization of high quality InP/Ga0.25In0.75As0.5P0.5 (λ=1.3 μm) and InP/Ga0.17In0.83As0.35P0.65 (λ=1.15 μm) grown by the LP-MOCVD technique using trimethylindium as indium source triethylgallium as gallium source and the hydrides AsH3 and PH3 as V-elements sources, arsenic and phosphorus.",

author = "M. Defour and F. Omnes and P. Maurel and M. Razeghi",

year = "1989",

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T1 - Croissance et caracterisation d'alliages GaInAsP de gaps egaux a 1,3 et 1,15 μm elabores par LP-MOCVD

AU - Defour, M.

AU - Omnes, F.

AU - Maurel, P.

AU - Razeghi, M.

PY - 1989/9/1

Y1 - 1989/9/1

N2 - The purpose of this paper is the description of the growth and characterization of high quality InP/Ga0.25In0.75As0.5P0.5 (λ=1.3 μm) and InP/Ga0.17In0.83As0.35P0.65 (λ=1.15 μm) grown by the LP-MOCVD technique using trimethylindium as indium source triethylgallium as gallium source and the hydrides AsH3 and PH3 as V-elements sources, arsenic and phosphorus.

AB - The purpose of this paper is the description of the growth and characterization of high quality InP/Ga0.25In0.75As0.5P0.5 (λ=1.3 μm) and InP/Ga0.17In0.83As0.35P0.65 (λ=1.15 μm) grown by the LP-MOCVD technique using trimethylindium as indium source triethylgallium as gallium source and the hydrides AsH3 and PH3 as V-elements sources, arsenic and phosphorus.

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SP - 387

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JO - Revue technique - Thomson-CSF

JF - Revue technique - Thomson-CSF

IS - 3

ER -

Croissance et caracterisation d'alliages GaInAsP de gaps egaux a 1,3 et 1,15 μm elabores par LP-MOCVD

Abstract

ASJC Scopus subject areas

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