Croissance et caracterisation d'alliages GaInAsP de gaps egaux a 1,3 et 1,15 μm elabores par LP-MOCVD

Translated title of the contribution: Growth and characterization of high quality InP/GaInAsP (λ=1.3 and 1.15 μm) grown by the LP-MOCVD technique

M. Defour*, F. Omnes, P. Maurel, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The purpose of this paper is the description of the growth and characterization of high quality InP/Ga0.25In0.75As0.5P0.5 (λ=1.3 μm) and InP/Ga0.17In0.83As0.35P0.65 (λ=1.15 μm) grown by the LP-MOCVD technique using trimethylindium as indium source triethylgallium as gallium source and the hydrides AsH3 and PH3 as V-elements sources, arsenic and phosphorus.

Translated title of the contributionGrowth and characterization of high quality InP/GaInAsP (λ=1.3 and 1.15 μm) grown by the LP-MOCVD technique
Original languageFrench
Pages (from-to)387-405
Number of pages19
JournalRevue technique - Thomson-CSF
Volume20-21
Issue number3
StatePublished - Sep 1 1989

ASJC Scopus subject areas

  • Engineering(all)

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