Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

H. Mohseni*, E. Michel, Jan Sandoen, M. Razeghi, W. Mitchel, G. Brown

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

89 Scopus citations

Abstract

In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 μm and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of 1.33×109 cm Hz1/2/W at 10.3 μm at 78 K.

Original languageEnglish (US)
Pages (from-to)1403-1405
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number10
DOIs
StatePublished - Sep 8 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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