Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

H. Mohseni; E. Michel; Jan Sandoen; M. Razeghi; W. Mitchel; G. Brown

doi:10.1063/1.119906

Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

H. Mohseni^*, E. Michel, Jan Sandoen, M. Razeghi, W. Mitchel, G. Brown

^*Corresponding author for this work

Electrical and Computer Engineering

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90 Scopus citations

Abstract

In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 μm and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of 1.33×10⁹ cm Hz^1/2/W at 10.3 μm at 78 K.

Original language	English (US)
Pages (from-to)	1403-1405
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	10
DOIs	https://doi.org/10.1063/1.119906
State	Published - Sep 8 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 μm and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of 1.33×109 cm Hz1/2/W at 10.3 μm at 78 K.",

author = "H. Mohseni and E. Michel and Jan Sandoen and M. Razeghi and W. Mitchel and G. Brown",

year = "1997",

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T1 - Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

AU - Mohseni, H.

AU - Michel, E.

AU - Sandoen, Jan

AU - Razeghi, M.

AU - Mitchel, W.

AU - Brown, G.

PY - 1997/9/8

Y1 - 1997/9/8

N2 - In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 μm and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of 1.33×109 cm Hz1/2/W at 10.3 μm at 78 K.

AB - In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 μm and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of 1.33×109 cm Hz1/2/W at 10.3 μm at 78 K.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

Abstract

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