Abstract
We report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed 80% cut-off at 11.6 μm and peak responsivity of 6.5 V/W with Johnson noise limited detectivity of 2.36×109 cm·Hz1/2/W at 10.7 μm at 78 K. The responsivity decreases at higher temperatures with a T2 behavior rather than exponential decay, and at room temperature the responsivity is about 660 mV/W at 11 μm. Lower Auger recombination rate in this system provides comparable detectivity to the best HgCdTe detectors at 300 K. Higher uniformity over large areas, simpler growth and the possibility of having read-out circuits in the same GaAs chip are the advantages of this system over HgCdTe detectors for near room temperature operation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 30-37 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3287 |
| DOIs | |
| State | Published - 1998 |
| Event | Photodetectors: Materials and Devices III - San Jose, CA, United States Duration: Jan 28 1998 → Jan 30 1998 |
Keywords
- Detectivity
- HgCdTe
- Infrared detector
- Noise
- Quantum well
- Type II
- Uncooled detector
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering