Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors

Seongsin Kim*, Matthew Erdtmann, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report InGaAs quantum dot intersubband infrared photoconductive detectors grown by low-pressure metal organic chemical vapor deposition (MOCVD) on semi-insulating GaAs substrates. The InGaAs quantum dots were constructed on InGaP matrix and the optimum growth conditions were investigated. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 μm with a high responsivity of 130 mA/W at 77 K, and a detectivity of 4.74×107 cm Hz1/2/W at 77 K. Low temperature intersubband photoresponse was also observed from the quantum dots grown on Si substrate.

Original languageEnglish (US)
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
StatePublished - Dec 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors'. Together they form a unique fingerprint.

Cite this