We report InGaAs quantum dot intersubband infrared photoconductive detectors grown by low-pressure metal organic chemical vapor deposition (MOCVD) on semi-insulating GaAs substrates. The InGaAs quantum dots were constructed on InGaP matrix and the optimum growth conditions were investigated. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 μm with a high responsivity of 130 mA/W at 77 K, and a detectivity of 4.74×107 cm Hz1/2/W at 77 K. Low temperature intersubband photoresponse was also observed from the quantum dots grown on Si substrate.
|Original language||English (US)|
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. 2|
|State||Published - Dec 1 1999|
ASJC Scopus subject areas
- Physics and Astronomy(all)