Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors

Seongsin Kim; Matthew Erdtmann; Manijeh Razeghi

Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors

Seongsin Kim^*, Matthew Erdtmann, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report InGaAs quantum dot intersubband infrared photoconductive detectors grown by low-pressure metal organic chemical vapor deposition (MOCVD) on semi-insulating GaAs substrates. The InGaAs quantum dots were constructed on InGaP matrix and the optimum growth conditions were investigated. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 μm with a high responsivity of 130 mA/W at 77 K, and a detectivity of 4.74×10⁷ cm Hz^1/2/W at 77 K. Low temperature intersubband photoresponse was also observed from the quantum dots grown on Si substrate.

Original language	English (US)
Pages (from-to)	S303-S306
Journal	Journal of the Korean Physical Society
Volume	35
Issue number	SUPPL. 2
State	Published - 1999

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

@article{cdf433aeaa864bfaaa1b172f8597df62,

title = "Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors",

abstract = "We report InGaAs quantum dot intersubband infrared photoconductive detectors grown by low-pressure metal organic chemical vapor deposition (MOCVD) on semi-insulating GaAs substrates. The InGaAs quantum dots were constructed on InGaP matrix and the optimum growth conditions were investigated. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 μm with a high responsivity of 130 mA/W at 77 K, and a detectivity of 4.74×107 cm Hz1/2/W at 77 K. Low temperature intersubband photoresponse was also observed from the quantum dots grown on Si substrate.",

author = "Seongsin Kim and Matthew Erdtmann and Manijeh Razeghi",

year = "1999",

language = "English (US)",

volume = "35",

pages = "S303--S306",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL. 2",

}

TY - JOUR

T1 - Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors

AU - Kim, Seongsin

AU - Erdtmann, Matthew

AU - Razeghi, Manijeh

PY - 1999

Y1 - 1999

N2 - We report InGaAs quantum dot intersubband infrared photoconductive detectors grown by low-pressure metal organic chemical vapor deposition (MOCVD) on semi-insulating GaAs substrates. The InGaAs quantum dots were constructed on InGaP matrix and the optimum growth conditions were investigated. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 μm with a high responsivity of 130 mA/W at 77 K, and a detectivity of 4.74×107 cm Hz1/2/W at 77 K. Low temperature intersubband photoresponse was also observed from the quantum dots grown on Si substrate.

AB - We report InGaAs quantum dot intersubband infrared photoconductive detectors grown by low-pressure metal organic chemical vapor deposition (MOCVD) on semi-insulating GaAs substrates. The InGaAs quantum dots were constructed on InGaP matrix and the optimum growth conditions were investigated. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 μm with a high responsivity of 130 mA/W at 77 K, and a detectivity of 4.74×107 cm Hz1/2/W at 77 K. Low temperature intersubband photoresponse was also observed from the quantum dots grown on Si substrate.

UR - http://www.scopus.com/inward/record.url?scp=0033408920&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033408920&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033408920

SN - 0374-4884

VL - 35

SP - S303-S306

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 2

ER -

Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors

Abstract

ASJC Scopus subject areas

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