Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

M. Razeghi; J. P. Duchemin

doi:10.1016/0022-0248(83)90251-8

Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

M. Razeghi^*, J. P. Duchemin

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.

Original language	English (US)
Pages (from-to)	76-82
Number of pages	7
Journal	Journal of Crystal Growth
Volume	64
Issue number	1
DOIs	https://doi.org/10.1016/0022-0248(83)90251-8
State	Published - Nov 1 1983

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(83)90251-8

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title = "Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure",

abstract = "The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.",

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T1 - Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

AU - Razeghi, M.

AU - Duchemin, J. P.

PY - 1983/11/1

Y1 - 1983/11/1

N2 - The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.

AB - The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.

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ER -

Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

Abstract

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