Abstract
The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.
Original language | English (US) |
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Pages (from-to) | 76-82 |
Number of pages | 7 |
Journal | Journal of Crystal Growth |
Volume | 64 |
Issue number | 1 |
DOIs | |
State | Published - Nov 1 1983 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry