Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

M. Razeghi; J. P. Duchemin

doi:10.1016/0022-0248(83)90251-8

Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

M. Razeghi^*, J. P. Duchemin

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.

Original language	English (US)
Pages (from-to)	76-82
Number of pages	7
Journal	Journal of Crystal Growth
Volume	64
Issue number	1
DOIs	https://doi.org/10.1016/0022-0248(83)90251-8
State	Published - Nov 1 1983

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure",

abstract = "The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.",

author = "M. Razeghi and Duchemin, {J. P.}",

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AU - Duchemin, J. P.

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N2 - The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.

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