Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

M. Razeghi; J. P. Duchemin

doi:10.1016/0022-0248(83)90251-8

Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

M. Razeghi^*, J. P. Duchemin

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.

Original language	English (US)
Pages (from-to)	76-82
Number of pages	7
Journal	Journal of Crystal Growth
Volume	64
Issue number	1
DOIs	https://doi.org/10.1016/0022-0248(83)90251-8
State	Published - Nov 1 1983

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/0022-0248(83)90251-8

Cite this

@article{c6cdcd396c994094827ddf6b2eb46601,

title = "Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure",

abstract = "The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.",

author = "M. Razeghi and Duchemin, {J. P.}",

year = "1983",

month = nov,

day = "1",

doi = "10.1016/0022-0248(83)90251-8",

language = "English (US)",

volume = "64",

pages = "76--82",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

AU - Razeghi, M.

AU - Duchemin, J. P.

PY - 1983/11/1

Y1 - 1983/11/1

N2 - The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.

AB - The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0042393852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042393852&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(83)90251-8

DO - 10.1016/0022-0248(83)90251-8

M3 - Article

AN - SCOPUS:0042393852

VL - 64

SP - 76

EP - 82

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -

Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this