Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

M. Razeghi*, J. P. Duchemin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.

Original languageEnglish (US)
Pages (from-to)76-82
Number of pages7
JournalJournal of Crystal Growth
Volume64
Issue number1
DOIs
StatePublished - Nov 1 1983

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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