Growth and characterization of InSbBi for long wavelength infrared photodetectors

J. J. Lee*, J. D. Kim, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

The epitaxial growth of InSbBi ternary alloys by low-pressure metalorganic chemical vapor deposition is reported on. X-ray diffraction spectra showed well resolved peaks of InSbBi and InSb films. Bi incorporation was confirmed by energy dispersive x-ray analysis. Photoresponse spectrum up to 9.3 μm which corresponds to 0.13 eV energy band gap has been measured in a sample with Bi composition of 5.8 at.% at 77 K. Electron mobility at room temperature ranges from 44 100 to 4910 cm2/Vs as Bi composition increases.

Original languageEnglish (US)
Pages (from-to)3266-3268
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number24
DOIs
StatePublished - Jun 16 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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