Abstract
The epitaxial growth of InSbBi ternary alloys by low-pressure metalorganic chemical vapor deposition is reported on. X-ray diffraction spectra showed well resolved peaks of InSbBi and InSb films. Bi incorporation was confirmed by energy dispersive x-ray analysis. Photoresponse spectrum up to 9.3 μm which corresponds to 0.13 eV energy band gap has been measured in a sample with Bi composition of 5.8 at.% at 77 K. Electron mobility at room temperature ranges from 44 100 to 4910 cm2/Vs as Bi composition increases.
Original language | English (US) |
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Pages (from-to) | 3266-3268 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 24 |
DOIs | |
State | Published - Jun 16 1997 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)