Growth and characterization of InSbBi for long wavelength infrared photodetectors

J. J. Lee; J. D. Kim; Manijeh Razeghi

doi:10.1063/1.119158

Growth and characterization of InSbBi for long wavelength infrared photodetectors

J. J. Lee^*, J. D. Kim, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

The epitaxial growth of InSbBi ternary alloys by low-pressure metalorganic chemical vapor deposition is reported on. X-ray diffraction spectra showed well resolved peaks of InSbBi and InSb films. Bi incorporation was confirmed by energy dispersive x-ray analysis. Photoresponse spectrum up to 9.3 μm which corresponds to 0.13 eV energy band gap has been measured in a sample with Bi composition of 5.8 at.% at 77 K. Electron mobility at room temperature ranges from 44 100 to 4910 cm2/Vs as Bi composition increases.

Original language	English (US)
Pages (from-to)	3266-3268
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	24
DOIs	https://doi.org/10.1063/1.119158
State	Published - Jun 16 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{76d86e6dd22841e1810c8acc8c3eb97d,

title = "Growth and characterization of InSbBi for long wavelength infrared photodetectors",

abstract = "The epitaxial growth of InSbBi ternary alloys by low-pressure metalorganic chemical vapor deposition is reported on. X-ray diffraction spectra showed well resolved peaks of InSbBi and InSb films. Bi incorporation was confirmed by energy dispersive x-ray analysis. Photoresponse spectrum up to 9.3 μm which corresponds to 0.13 eV energy band gap has been measured in a sample with Bi composition of 5.8 at.% at 77 K. Electron mobility at room temperature ranges from 44 100 to 4910 cm2/Vs as Bi composition increases.",

author = "Lee, {J. J.} and Kim, {J. D.} and Manijeh Razeghi",

year = "1997",

month = jun,

day = "16",

doi = "10.1063/1.119158",

language = "English (US)",

volume = "70",

pages = "3266--3268",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Growth and characterization of InSbBi for long wavelength infrared photodetectors

AU - Lee, J. J.

AU - Kim, J. D.

AU - Razeghi, Manijeh

PY - 1997/6/16

Y1 - 1997/6/16

N2 - The epitaxial growth of InSbBi ternary alloys by low-pressure metalorganic chemical vapor deposition is reported on. X-ray diffraction spectra showed well resolved peaks of InSbBi and InSb films. Bi incorporation was confirmed by energy dispersive x-ray analysis. Photoresponse spectrum up to 9.3 μm which corresponds to 0.13 eV energy band gap has been measured in a sample with Bi composition of 5.8 at.% at 77 K. Electron mobility at room temperature ranges from 44 100 to 4910 cm2/Vs as Bi composition increases.

AB - The epitaxial growth of InSbBi ternary alloys by low-pressure metalorganic chemical vapor deposition is reported on. X-ray diffraction spectra showed well resolved peaks of InSbBi and InSb films. Bi incorporation was confirmed by energy dispersive x-ray analysis. Photoresponse spectrum up to 9.3 μm which corresponds to 0.13 eV energy band gap has been measured in a sample with Bi composition of 5.8 at.% at 77 K. Electron mobility at room temperature ranges from 44 100 to 4910 cm2/Vs as Bi composition increases.

UR - http://www.scopus.com/inward/record.url?scp=0031165816&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031165816&partnerID=8YFLogxK

U2 - 10.1063/1.119158

DO - 10.1063/1.119158

M3 - Article

AN - SCOPUS:0031165816

VL - 70

SP - 3266

EP - 3268

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -