Growth and characterization of long-wavelength infrared type-II superlattice photodiodes on a 3-in GaSb wafer

Binh Minh Nguyen*, Guanxi Chen, Minh Anh Hoang, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

We report the molecular beam epitaxial growth and characterization of high-performance Type-II superlattice photodiodes on a 3-in GaSb substrate for long-wavelength infrared detection. A 7.3-μm-thick device structure shows excellent structural homogeneity as demonstrated by atomic force microscopy and X-ray diffraction characterization. Optical and electrical measurements of the photodiodes reveal not only the uniformity of the Type-II superlattice material but also of the fabrication process. Across the wafer, at 77 K, photodiodes with a 50% cut-off wavelength of 11 μm exhibit more than 45% quantum efficiency and a dark current density of 1.0 × 10-4 A/cm2 at 50 mV, giving a specific detectivity of 6 × 1011 cm Hz 1/2/W.

Original languageEnglish (US)
Article number5743092
Pages (from-to)686-690
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume47
Issue number5
DOIs
StatePublished - Apr 19 2011

Keywords

  • Long-wavelength infrared detectors and focal plane arrays
  • material uniformity
  • molecular beam epitaxy
  • type-II InAs/GaSb superlattices

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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