Growth and characterization of long-wavelength infrared type-II superlattice photodiodes on a 3-in GaSb wafer

Binh Minh Nguyen; Guanxi Chen; Minh Anh Hoang; Manijeh Razeghi

doi:10.1109/JQE.2010.2103049

Growth and characterization of long-wavelength infrared type-II superlattice photodiodes on a 3-in GaSb wafer

Binh Minh Nguyen^*, Guanxi Chen, Minh Anh Hoang, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

We report the molecular beam epitaxial growth and characterization of high-performance Type-II superlattice photodiodes on a 3-in GaSb substrate for long-wavelength infrared detection. A 7.3-μm-thick device structure shows excellent structural homogeneity as demonstrated by atomic force microscopy and X-ray diffraction characterization. Optical and electrical measurements of the photodiodes reveal not only the uniformity of the Type-II superlattice material but also of the fabrication process. Across the wafer, at 77 K, photodiodes with a 50% cut-off wavelength of 11 μm exhibit more than 45% quantum efficiency and a dark current density of 1.0 × 10^-4 A/cm² at 50 mV, giving a specific detectivity of 6 × 10¹¹ cm Hz ^1/2/W.

Original language	English (US)
Article number	5743092
Pages (from-to)	686-690
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	47
Issue number	5
DOIs	https://doi.org/10.1109/JQE.2010.2103049
State	Published - 2011

Keywords

Long-wavelength infrared detectors and focal plane arrays
material uniformity
molecular beam epitaxy
type-II InAs/GaSb superlattices

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2010.2103049

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title = "Growth and characterization of long-wavelength infrared type-II superlattice photodiodes on a 3-in GaSb wafer",

abstract = "We report the molecular beam epitaxial growth and characterization of high-performance Type-II superlattice photodiodes on a 3-in GaSb substrate for long-wavelength infrared detection. A 7.3-μm-thick device structure shows excellent structural homogeneity as demonstrated by atomic force microscopy and X-ray diffraction characterization. Optical and electrical measurements of the photodiodes reveal not only the uniformity of the Type-II superlattice material but also of the fabrication process. Across the wafer, at 77 K, photodiodes with a 50% cut-off wavelength of 11 μm exhibit more than 45% quantum efficiency and a dark current density of 1.0 × 10-4 A/cm2 at 50 mV, giving a specific detectivity of 6 × 1011 cm Hz 1/2/W.",

keywords = "Long-wavelength infrared detectors and focal plane arrays, material uniformity, molecular beam epitaxy, type-II InAs/GaSb superlattices",

author = "Nguyen, {Binh Minh} and Guanxi Chen and Hoang, {Minh Anh} and Manijeh Razeghi",

note = "Funding Information: Manuscript received October 26, 2010; revised December 14, 2010; accepted December 21, 2010. Date of current version March 29, 2011. This work was supported in part by the Center for Quantum Devices, Northwestern University, Evanston, IL.",

year = "2011",

doi = "10.1109/JQE.2010.2103049",

language = "English (US)",

volume = "47",

pages = "686--690",

journal = "IEEE Journal of Quantum Electronics",

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T1 - Growth and characterization of long-wavelength infrared type-II superlattice photodiodes on a 3-in GaSb wafer

AU - Nguyen, Binh Minh

AU - Chen, Guanxi

AU - Hoang, Minh Anh

AU - Razeghi, Manijeh

N1 - Funding Information: Manuscript received October 26, 2010; revised December 14, 2010; accepted December 21, 2010. Date of current version March 29, 2011. This work was supported in part by the Center for Quantum Devices, Northwestern University, Evanston, IL.

PY - 2011

Y1 - 2011

N2 - We report the molecular beam epitaxial growth and characterization of high-performance Type-II superlattice photodiodes on a 3-in GaSb substrate for long-wavelength infrared detection. A 7.3-μm-thick device structure shows excellent structural homogeneity as demonstrated by atomic force microscopy and X-ray diffraction characterization. Optical and electrical measurements of the photodiodes reveal not only the uniformity of the Type-II superlattice material but also of the fabrication process. Across the wafer, at 77 K, photodiodes with a 50% cut-off wavelength of 11 μm exhibit more than 45% quantum efficiency and a dark current density of 1.0 × 10-4 A/cm2 at 50 mV, giving a specific detectivity of 6 × 1011 cm Hz 1/2/W.

AB - We report the molecular beam epitaxial growth and characterization of high-performance Type-II superlattice photodiodes on a 3-in GaSb substrate for long-wavelength infrared detection. A 7.3-μm-thick device structure shows excellent structural homogeneity as demonstrated by atomic force microscopy and X-ray diffraction characterization. Optical and electrical measurements of the photodiodes reveal not only the uniformity of the Type-II superlattice material but also of the fabrication process. Across the wafer, at 77 K, photodiodes with a 50% cut-off wavelength of 11 μm exhibit more than 45% quantum efficiency and a dark current density of 1.0 × 10-4 A/cm2 at 50 mV, giving a specific detectivity of 6 × 1011 cm Hz 1/2/W.

KW - Long-wavelength infrared detectors and focal plane arrays

KW - material uniformity

KW - molecular beam epitaxy

KW - type-II InAs/GaSb superlattices

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Growth and characterization of long-wavelength infrared type-II superlattice photodiodes on a 3-in GaSb wafer

Abstract

Keywords

ASJC Scopus subject areas

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