Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer

Binh Minh Nguyen; Guanxi Chen; Minh Anh Hoang; Manijeh Razeghi

doi:10.1117/12.879860

Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer

Binh Minh Nguyen^*, Guanxi Chen, Minh Anh Hoang, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Scopus citations

Abstract

One of the great advantages of Type II InAs/GaSb superlattice over other competing technologies for the third generation infrared imagers is the potential to have excellent uniformity across a large area as the electronic structure of the material is controlled by the layer thicknesses, not by the composition of the materials. This can economize the material growth, reduce the fabrication cost, and especially allow the realization of large format imagers. In this talk, we report the molecular beam epitaxial growth of Type II superlattices on a 3" GaSb substrate for long wavelength infrared detection. The material exhibits excellent structural, optical and electrical uniformity via AFM, Xray, quantum efficiency and I-V measurements. At 77K, 11μm cutoff photodiodes exhibit more than 45% quantum efficiency, and a dark current density of 1.0x10^-4A/cm² at 50 mV, resulting in a specific detectivity of 6x10¹¹ cm.Hz^1/2/W.

Original language	English (US)
Title of host publication	Quantum Sensing and Nanophotonic Devices VIII
DOIs	https://doi.org/10.1117/12.879860
State	Published - 2011
Event	Quantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States Duration: Jan 23 2011 → Jan 27 2011

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7945
ISSN (Print)	0277-786X

Other

Other	Quantum Sensing and Nanophotonic Devices VIII
Country/Territory	United States
City	San Francisco, CA
Period	1/23/11 → 1/27/11

Keywords

InAs/GaSb
LWIR
M-structure
Molecular beam epitaxy
Type II superlattice
uniformity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.879860

Cite this

@inproceedings{5c6aa387d5db44ceb8de97793481ee1b,

title = "Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3{"} GaSb wafer",

abstract = "One of the great advantages of Type II InAs/GaSb superlattice over other competing technologies for the third generation infrared imagers is the potential to have excellent uniformity across a large area as the electronic structure of the material is controlled by the layer thicknesses, not by the composition of the materials. This can economize the material growth, reduce the fabrication cost, and especially allow the realization of large format imagers. In this talk, we report the molecular beam epitaxial growth of Type II superlattices on a 3{"} GaSb substrate for long wavelength infrared detection. The material exhibits excellent structural, optical and electrical uniformity via AFM, Xray, quantum efficiency and I-V measurements. At 77K, 11μm cutoff photodiodes exhibit more than 45% quantum efficiency, and a dark current density of 1.0x10-4A/cm2 at 50 mV, resulting in a specific detectivity of 6x1011 cm.Hz1/2/W.",

keywords = "InAs/GaSb, LWIR, M-structure, Molecular beam epitaxy, Type II superlattice, uniformity",

author = "Nguyen, {Binh Minh} and Guanxi Chen and Hoang, {Minh Anh} and Manijeh Razeghi",

year = "2011",

doi = "10.1117/12.879860",

language = "English (US)",

isbn = "9780819484826",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Quantum Sensing and Nanophotonic Devices VIII",

note = "Quantum Sensing and Nanophotonic Devices VIII ; Conference date: 23-01-2011 Through 27-01-2011",

}

Nguyen, BM, Chen, G, Hoang, MA & Razeghi, M 2011, Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer. in Quantum Sensing and Nanophotonic Devices VIII., 79451O, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7945, Quantum Sensing and Nanophotonic Devices VIII, San Francisco, CA, United States, 1/23/11. https://doi.org/10.1117/12.879860

Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer. / Nguyen, Binh Minh; Chen, Guanxi; Hoang, Minh Anh et al.
Quantum Sensing and Nanophotonic Devices VIII. 2011. 79451O (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7945).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer

AU - Nguyen, Binh Minh

AU - Chen, Guanxi

AU - Hoang, Minh Anh

AU - Razeghi, Manijeh

PY - 2011

Y1 - 2011

N2 - One of the great advantages of Type II InAs/GaSb superlattice over other competing technologies for the third generation infrared imagers is the potential to have excellent uniformity across a large area as the electronic structure of the material is controlled by the layer thicknesses, not by the composition of the materials. This can economize the material growth, reduce the fabrication cost, and especially allow the realization of large format imagers. In this talk, we report the molecular beam epitaxial growth of Type II superlattices on a 3" GaSb substrate for long wavelength infrared detection. The material exhibits excellent structural, optical and electrical uniformity via AFM, Xray, quantum efficiency and I-V measurements. At 77K, 11μm cutoff photodiodes exhibit more than 45% quantum efficiency, and a dark current density of 1.0x10-4A/cm2 at 50 mV, resulting in a specific detectivity of 6x1011 cm.Hz1/2/W.

AB - One of the great advantages of Type II InAs/GaSb superlattice over other competing technologies for the third generation infrared imagers is the potential to have excellent uniformity across a large area as the electronic structure of the material is controlled by the layer thicknesses, not by the composition of the materials. This can economize the material growth, reduce the fabrication cost, and especially allow the realization of large format imagers. In this talk, we report the molecular beam epitaxial growth of Type II superlattices on a 3" GaSb substrate for long wavelength infrared detection. The material exhibits excellent structural, optical and electrical uniformity via AFM, Xray, quantum efficiency and I-V measurements. At 77K, 11μm cutoff photodiodes exhibit more than 45% quantum efficiency, and a dark current density of 1.0x10-4A/cm2 at 50 mV, resulting in a specific detectivity of 6x1011 cm.Hz1/2/W.

KW - InAs/GaSb

KW - LWIR

KW - M-structure

KW - Molecular beam epitaxy

KW - Type II superlattice

KW - uniformity

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Quantum Sensing and Nanophotonic Devices VIII

T2 - Quantum Sensing and Nanophotonic Devices VIII

Y2 - 23 January 2011 through 27 January 2011

ER -

Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer

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