Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer

Binh Minh Nguyen*, Guanxi Chen, Minh Anh Hoang, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations


One of the great advantages of Type II InAs/GaSb superlattice over other competing technologies for the third generation infrared imagers is the potential to have excellent uniformity across a large area as the electronic structure of the material is controlled by the layer thicknesses, not by the composition of the materials. This can economize the material growth, reduce the fabrication cost, and especially allow the realization of large format imagers. In this talk, we report the molecular beam epitaxial growth of Type II superlattices on a 3" GaSb substrate for long wavelength infrared detection. The material exhibits excellent structural, optical and electrical uniformity via AFM, Xray, quantum efficiency and I-V measurements. At 77K, 11μm cutoff photodiodes exhibit more than 45% quantum efficiency, and a dark current density of 1.0x10-4A/cm2 at 50 mV, resulting in a specific detectivity of 6x1011 cm.Hz1/2/W.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices VIII
StatePublished - May 13 2011
EventQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
Duration: Jan 23 2011Jan 27 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherQuantum Sensing and Nanophotonic Devices VIII
Country/TerritoryUnited States
CitySan Francisco, CA


  • InAs/GaSb
  • LWIR
  • M-structure
  • Molecular beam epitaxy
  • Type II superlattice
  • uniformity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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